Diamond MISFETs fabricated on high quality polycrystalline CVD diamond

Hirama, Kazuyuki; Takayanagi, H.; Yamauchi, S.; Jingu, Yoshikatsu; Umezawa, Hamao; Kawarada, Hiroshi

doi:10.1109/ispsd.2007.4294984

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“…The maximum drain current and f T were respectively -550 mA/mm and 45 GHz [4]. On the other hand, for diamond FETs fabricated on single crystal films, highest values are around 350 mA/mm and 30 GHz [5]. In this paper, we have fabricated diamond MISFETs on polycrystalline diamond films utilizing alumina as a gate insulator.…”

Section: Introductionmentioning

confidence: 98%

DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator

Hirama

Jingu

Ichikawa

et al. 2008

MSF

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We fabricated diamond MISFETs on polycrystalline films using alumina gate insulator. A hole accumulation layer has been utilized as hole current channel. The hydrogen-termination was achieved by remote hydrogen plasma. The sheet resistance strongly depends on the substrate temperature during hydrogen-termination process. The polycrystalline diamond MISFETs showed high drain current density of -650 mA/mm and cut-off frequency of 42 GHz. These values are higher than those of single crystal diamond FETs ever reported.

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Section: Introductionmentioning

confidence: 98%