1986
DOI: 10.2497/jjspm.33.262
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Diamond deposition on WC-Co cemented carbide by means of hot-filament method.

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Cited by 27 publications
(4 citation statements)
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“…Chemical and electrochemical etching of cobalt are widely used to reduce the amount of cobalt at the diamond-insert interface (e.g. Suzuki et al 1986;Saito et al 1991). The reported etching procedures include the use of H 2 O 2 : H 2 SO 4 = 9 : 1 (Park et al 1993), HNO 3 (Nesladek et al 1993) and other solvents.…”
Section: The Diamond-carbide Interfacementioning
confidence: 99%
“…Chemical and electrochemical etching of cobalt are widely used to reduce the amount of cobalt at the diamond-insert interface (e.g. Suzuki et al 1986;Saito et al 1991). The reported etching procedures include the use of H 2 O 2 : H 2 SO 4 = 9 : 1 (Park et al 1993), HNO 3 (Nesladek et al 1993) and other solvents.…”
Section: The Diamond-carbide Interfacementioning
confidence: 99%
“…come these problems, several methods have been applied. The removal of the Co-rich binder phase near the surface of a WC-Co substrate by etching greatly reduced the formation of graphite-like carbon film deposition [1]. Predecarburization of a hot-pressed Co-free WC substrate before diamond deposition, which recrystallizes the WC grains, greatly enhanced the adhesion strength [3].…”
Section: Int?oductionmentioning
confidence: 99%
“…The high hardness and thermal conductivity of a diamond-coated layer can meet the requirements of high speed machining and very smooth finished surfaces. As a consequence of much effort on this subject [1][2][3], a number of commercial cutting tools have been announced recently [4,5]. However, there still remains much doubt about their performances as cutting tools [6].…”
Section: Int?oductionmentioning
confidence: 99%
“…Ρ€Π°Π·Ρ€Π°Π±ΠΎΡ‚Π°Π»ΠΈ эффСктивныС ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΈΠΊΠΈ (хранящиСся Π² Ρ€Π΅ΠΆΠΈΠΌΠ΅ Π½ΠΎΡƒ-Ρ…Π°Ρƒ) ΡΠΏΠ΅Ρ†ΠΈΠ°Π»ΡŒΠ½ΠΎΠΉ многосту-ΠΏΠ΅Π½Ρ‡Π°Ρ‚ΠΎΠΉ ΠΏΠΎΠ΄Π³ΠΎΡ‚ΠΎΠ²ΠΊΠΈ ΠΏΠΎΠ΄Π»ΠΎΠΆΠ΅ΠΊ ΠΏΠ΅Ρ€Π΅Π΄ осаТдСниСм Π°Π»ΠΌΠ°-Π·Π°, Ρ€Π΅ΡˆΠ°ΡŽΡ‰ΠΈΠ΅ Π² основной стСпСни ΠΏΡ€ΠΎΠ±Π»Π΅ΠΌΡƒ Π°Π΄Π³Π΅Π·ΠΈΠΈ. Π’ Ρ‚ΠΎ ΠΆΠ΅ врСмя Π² большом числС Π½Π°ΡƒΡ‡Π½Ρ‹Ρ… ΠΏΡƒΠ±Π»ΠΈΠΊΠ°Ρ†ΠΈΠΉ ΡΡƒΡ‚ΡŒ ΠΏΠΎΠ΄Π³ΠΎΡ‚ΠΎΠ²ΠΊΠΈ Ρ‚Π²Π΅Ρ€Π΄ΠΎΠ³ΠΎ сплава ΠΏΠ΅Ρ€Π΅Π΄ нанСсСниСм Π°Π»-ΠΌΠ°Π·Π° сводится ΠΈΡΠΊΠ»ΡŽΡ‡ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎ ΠΊ ΡƒΠ΄Π°Π»Π΅Π½ΠΈΡŽ повСрхност-Π½ΠΎΠ³ΠΎ слоя ΠΊΠΎΠ±Π°Π»ΡŒΡ‚Π° [5][6][7], ΡΠ²Π»ΡΡŽΡ‰Π΅Π³ΠΎΡΡ ΠΊΠ°Ρ‚Π°Π»ΠΈΠ·Π°Ρ‚ΠΎΡ€ΠΎΠΌ Π³Ρ€Π°Ρ„ΠΈΡ‚ΠΈΠ·Π°Ρ†ΠΈΠΈ Π°Π»ΠΌΠ°Π·Π° [8,9]. Π˜Π·Π²Π΅ΡΡ‚Π½Ρ‹ Ρ€Π°Π±ΠΎΡ‚Ρ‹, Π³Π΄Π΅ Π°Π²Ρ‚ΠΎΡ€Ρ‹ ΠΎΠΏΠΈΡΡ‹Π²Π°ΡŽΡ‚ эффСкт Π³Ρ€Π°Ρ„ΠΈΡ‚ΠΈΠ·Π°Ρ†ΠΈΠΈ Π°Π»ΠΌΠ°Π·Π° ΠΏΠΎΠ΄ дСйствиСм ΠΊΠΎΠ±Π°Π»ΡŒΡ‚Π° Π½Π΅ Ρ‚ΠΎΠ»ΡŒΠΊΠΎ Π² процСссС осаТдСния, Π½ΠΎ ΠΈ эффСкт Π³Ρ€Π°Ρ„ΠΈΡ‚ΠΈΠ·Π°Ρ†ΠΈΠΈ ΡƒΠΆΠ΅ сформированного Π°Π»ΠΌΠ°Π·Π° [9,10].…”
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