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We investigated the formation of nanowhiskers by means of air plasma dry etching using diamond films of two different kinds: as-grown diamond films and films with molybdenum (Mo) deposits. As for the as-grown diamond films, nanowhiskers were found to form preferentially at grain boundaries of diamond crystals. Auger depth profile analysis of the etched films revealed a progressive enrichment by Mo toward the whisker tip, resulting from accidental sputtering of Mo substrate holder. With dry etching of diamond films with preformed Mo deposits, well-aligned whiskers 100 nm in diameter were found to form uniformly over the entire film surface with a population density of 30/μm2. From these findings, it follows that Mo deposits serve as micromasks for the formation of the nanowhiskers. It was also confirmed that these whiskers showed excellent field-emission behavior.

The electrical properties of Cu(In,Ga)Se 2 /Mo junctions were characterized with respect of MoSe 2 orientation and Na doping level using an inverse transmission line method, in which the Cu(In,Ga)Se 2 (CIGS)/Mo contact resistance could be measured separately from the CIGS film sheet resistance. The MoSe 2 orientation was controlled by varying the Mo surface density, with the c-axis parallel and normal orientations favored on Mo surfaces of lower and higher density, respectively. The effect of Na doping was compared by using samples with and without a SiO x film on sodalime glass. The conversion of the MoSe 2 orientation from c-axis normal to parallel produced a twofold reduction in CIGS/Mo contact resistance. Measurements of the contact resistances as a function of temperature showed that the difference in CIGS/Mo contact resistance between the samples with different MoSe 2 orientations was due to different barrier heights at the back contact. Comparison between Na-doped and Na-reduced samples revealed that the contact resistance for the Na-reduced system was four times of that of the doped sample, which showed more pronounced Schottky-junction behavior at lower temperature, indicating that Na doping effectively reduced the barrier height at the back contact.

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