1974
DOI: 10.1016/0022-0248(74)90338-8
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Diameter control of pulled germanium crystals by means of Peltier cooling

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Cited by 9 publications
(3 citation statements)
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“…One method which falls outside of this classification was proposed by Vojdani et al [152] who reported on the use of the Peltier effect to control, by open loop, the diameter of pulled germanium crystals. The advantage of the Peltier effect is of course that heat can be generated or removed exactly at the growth interface so that the control of the growth rate can be achieved without thermal lag.…”
Section: Introductionmentioning
confidence: 98%
“…One method which falls outside of this classification was proposed by Vojdani et al [152] who reported on the use of the Peltier effect to control, by open loop, the diameter of pulled germanium crystals. The advantage of the Peltier effect is of course that heat can be generated or removed exactly at the growth interface so that the control of the growth rate can be achieved without thermal lag.…”
Section: Introductionmentioning
confidence: 98%
“…Suponha-se uma solidificação unidimensional, onde nas extremidades do corpo ideal da Figura -4.3 se aplica um campo elétrico E uniforme em todo o corpo, como aquele usado no trabalho de S. Vojdani et al (1974) onde foi puxado um cristal de germânio, por técnica Czochralski.…”
Section: -Relação Entre a Variação No Diâmetro Do Cristal E A Variaçãunclassified
“…do forno para puxamento de monocristais pelo método de crescimento Czochralski com campo elétrico aplicado (ECZ) S Vojdani et al (1974). puxaram cristais de germânio puro (Ge) na direção [111], por técnica Czochralski, usando uma carga de 250 g e taxas de puxamento de 1.0 mm/min e uma taxa de rotação da semente de 60 rpm, com uma corrente através da interface cristal/fundido de no máximo 20 A, na direção do sólido para o fundido conforme mostra a Figura -4.4.…”
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