1993
DOI: 10.1007/978-3-642-78208-4
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Crystal Pulling from the Melt

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Cited by 64 publications
(50 citation statements)
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“…In this technique the crystal grows from the melt by solidification of the surface of a crystalline seed, which is dipped into the melt and subsequently slowly pulled away from it. 9 In this case the composition of the icosahedral crystal is different from that of the initial alloy due to the peritectic character of i-Al-Pd-Mn formation. 10 Coarsely speaking, for a successful growth the alloy composition should contain about two atomic percent 11 Since the crystal thus contains less Al and more Mn than the initial alloy, the Al concentration should increase and that of Mn should decrease during the crystal growth.…”
Section: Methodsmentioning
confidence: 99%
“…In this technique the crystal grows from the melt by solidification of the surface of a crystalline seed, which is dipped into the melt and subsequently slowly pulled away from it. 9 In this case the composition of the icosahedral crystal is different from that of the initial alloy due to the peritectic character of i-Al-Pd-Mn formation. 10 Coarsely speaking, for a successful growth the alloy composition should contain about two atomic percent 11 Since the crystal thus contains less Al and more Mn than the initial alloy, the Al concentration should increase and that of Mn should decrease during the crystal growth.…”
Section: Methodsmentioning
confidence: 99%
“…Nanometre sized defects in Si can be caused by the aggregation of Si interstitials into more complex defects [33,34], or due to the entrapment of nanosized crystals forming pockets at the growth front. In the unmodified alloy, Si grows ahead of the solidifying front by the TPRE mechanism [24].…”
Section: Al and Sr Concentrations In Simentioning
confidence: 99%
“…Given this anisotropic growth mode and due to the low solubility and low distribution coefficient of Al in Si (k=0.002) [35], Al will be accumulated at the growth front. At a certain Al concentration, entrapment of this Al-rich layer in small pockets of high Al concentration can occur [34,36]. Moreover, Si clusters which were not completely dissolved in the melt can also be incorporated at the solidifying growth front resulting in interstitial lattice defects [37].…”
Section: Al and Sr Concentrations In Simentioning
confidence: 99%
“…(b) The dopant concentration (along the growth axis) at the distance z from the origin of the crystal can be obtained by using the classical relation [15]:…”
Section: Determination Of the Effective Segregation Coefficient Of Pbmentioning
confidence: 99%