Czochralski Process Dynamics and Control Design

Winkler, J.; Neubert, Michael; Rudolph, Joachim; Duanmu, Ning; Gevelber, Michael

doi:10.1002/9781444320237.ch3

Cited by 5 publications

(6 citation statements)

References 91 publications

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“…The standard Cz growth model commonly referred to as either the hydromechanical-geometrical model [29] or simply the crystal growth dynamics at the crystal-melt solidification inter-Preprint -Inverse response behaviour in the bright ring radius measurement of the Czochralski process I: Investigation 4 face, is given by (cf. Fig.…”

Section: Growth Dynamicsmentioning

confidence: 99%

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Inverse response behaviour in the bright ring radius measurement of the Czochralski process I: Investigation

Bukhari¹,

Hovd²,

Winkler

2021

Journal of Crystal Growth

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Section: Growth Dynamicsmentioning

confidence: 99%

“…The heat balance across the crystallization interface should be maintained such that the net flow of heat is towards the crystallizing interface. In other words, the continuous heat loss from the meniscus into the crystal (heat of fusion/latent heat) ensures the ongoing crystallization/solidification [29].…”

Section: Growth Dynamicsmentioning

confidence: 99%

Inverse response behaviour in the bright ring radius measurement of the Czochralski process I: Investigation

Bukhari¹,

Hovd²,

Winkler

2021

Journal of Crystal Growth

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“…However, this algorithm contains a parameter which must be empirically determined to guarantee convergence. A reduced order nonlinear tracking observer for the Cz and the LEC system including full meniscus dynamics is presented in [22]. As far as the system is tracked along its reference trajectory this approach produces very accurate results.…”

Section: Evaluation Of the Force Acting On A Load Cellmentioning

confidence: 99%

“…Many unknown physical parameters and the complex structure of the inner assemblies worsen the situation. Here, from a control technological point of view, one has to nd a balance between accuracy and real time capability of the model [21,30].…”

Section: Modeling Issuesmentioning

confidence: 99%

A Review of the Automation of the Czochralski Crystal Growth Process

2013

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On the occasion of the centennial of the invention of the Czochralski crystal growth process by the Polish scientist Jan Czochralski, a review of selected strategies for the automatic control of this process is given. This review provides a sketch of the fundamental challenges of controlling the Czochralski process and the basic concepts of feedback control. Both early and modern approaches to the control of the Czochralski process are described.The discussion focuses on questions related to feed-forward control, feedback control, and state estimation. The presented methods rely on simple mathematical process models in contrast to the nite element model-based approaches typically used in crystal growth process design and analysis. Such mathematical models motivate both the structure and parameters of the chosen controller. A comprehensive list of references to background literature on this topic completes this survey.

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“…A typical approach to obtaining a single-crystalline 2D layer is to grow a single-domain layer as large as possible from one nucleus through the inhibition of multiple uncontrollable nucleations on a polycrystalline catalytic surface. This process is similar to the concept of the Czochralski method. , For example, centimeter-sized single-domain graphene is successfully synthesized; however, the growth of such a large single domain takes a long time, which increases the total production cost . Moreover, the size of a single-crystalline domain cannot exceed a certain scale because the position and period of 2D nuclei cannot be controlled at the initial stage of its growth.…”

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confidence: 95%

Toward Scalable Growth for Single-Crystal Graphene on Polycrystalline Metal Foil

et al. 2020

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Despite the enormous potential of the single-crystalline two-dimensional (2D) materials for a wide range of future innovations and applications, 2D single-crystals are still suffering in industrialization due to the lack of efficient large-area production methods. In this work, we introduce a general approach for the scalable growth of single-crystalline graphene, which is a representative 2D material, through “transplanting” uniaxially aligned graphene “seedlings” onto a larger-area catalytic growth substrate. By inducing homoepitaxial growth of graphene from the edges of the seeds arrays without additional nucleations, we obtained single-crystalline graphene with an area four times larger than the mother graphene seed substrate. Moreover, the defect-healing process eliminated the inherent defects of seeds, ensuring the reliability and crystallinity of the single-crystalline graphene for industrialization.

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Czochralski Process Dynamics and Control Design

Cited by 5 publications

References 91 publications

Inverse response behaviour in the bright ring radius measurement of the Czochralski process I: Investigation

Inverse response behaviour in the bright ring radius measurement of the Czochralski process I: Investigation

A Review of the Automation of the Czochralski Crystal Growth Process

Toward Scalable Growth for Single-Crystal Graphene on Polycrystalline Metal Foil

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