DFB-LD/modulator integrated light source by bandgap energy controlled selective MOVPE

Kato, Tomoaki; Sasaki, T.; Komatsu, K.; Mito, I.

doi:10.1049/el:19920095

Cited by 76 publications

(10 citation statements)

References 1 publication

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“…We used the selective area MOVPE growth technique, it is well known that the thickness of a layer grown on an open stripe region between mask stripes increases with the increase of the mask stripe width [7][8]. This growth technique is very attractive for fabricating longitudinal bandgap modulated superluminescent diodes (LBM-SLDs), because an optical-waveguide structure with different bandgap energy toward the waveguide direction can be formed by selective area growth.…”

Section: Design and Fabricationmentioning

confidence: 99%

1.0μm semiconductor light sources with wide bandwidth for optical coherence tomography

et al. 2009

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A key component of the OCT technique is the light source with widely spectrum. Extremely broadband 1.0 µm semiconductor light sources are fabricated with two kinds of device structures of multiplexing emitting layer. The measured spectra of the fabricated device with "longitudinal bandgap modulated structure" show that the full-width at half-maximum spectral width could be as large as 156 nm. The wavelength swept sources which contain a fabricated device with "asymmetric dual emitting layers structure" have a center wavelength of 1.06 µm, wavelength range of 90 nm, scanning rate of 2kHz.

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Section: Design and Fabricationmentioning

confidence: 99%

1.0μm semiconductor light sources with wide bandwidth for optical coherence tomography

et al. 2009

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“…Control of the band gap energy in multiquantum well structures and its application to practical photonic integrated devices using selective area growth was reported and demonstrated almost simultaneously by two groups. 13,14 We applied this technique to control where self-assembled quantum dots form. A 30-nm-thick SiO 2 film was formed on a ͑100͒ GaAs substrate by plasma chemical vapor deposition.…”

Section: Area-controlled Growth Of Inas Quantum Dots and Improvement mentioning

confidence: 99%

Area-controlled growth of InAs quantum dots and improvement of density and size distribution

Tatebayashi

Nishioka

Someya

et al. 2000

Applied Physics Letters

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“…Combined with selective area growth (SAG), it is considered to be the most feasible technique for the monolithic integration of optoelectronic circuits (OEICs). [5][6][7] By designing operating parameters and mask patterns, components that require appropriate film thickness and composition in OEICs could be precisely integrated by SAG technique. Because multiple-quantum-well (MQW) structures have been widely used in all types of OEICs, such thickness and composition control become much more relevant and important for industrial applications.…”

Section: Introductionmentioning

confidence: 99%

Kinetic Analysis of InAsP by Metalorganic Vapor Phase Epitaxy Selective Area Growth Technique

Wang

Song

Sugiyama

et al. 2009

jjap

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The fundamental kinetics of metal organic vapor phase epitaxy (MOVPE) related ternary compound-InAsP has been systematically investigated by analyzing selective area growth. The overall surface reaction rate constant (k s-overal ) of indium species in this material system is successfully obtained, it shows a composition dependence in which k s-overall increases with the amount of P in InAs 1Àx P x . On the basis of binary kinetics of InAs and InP, k s-overall can be estimated from the linear combination of the surface reaction rate constant (k s ) in the As site and the k s in the P site. Result shows that the linear estimation of k s-overall is consistent with experimental data, which indicates that the incorporations of indium species in the P and As sites should be almost independent of each other. These results revealed that the real surface process of the ternary material system provides significant information and fundamental concepts for further modeling of more complicated quaternary compounds, such as InGaAsP. #

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DFB-LD/modulator integrated light source by bandgap energy controlled selective MOVPE

Cited by 76 publications

References 1 publication

1.0μm semiconductor light sources with wide bandwidth for optical coherence tomography

1.0μm semiconductor light sources with wide bandwidth for optical coherence tomography

Area-controlled growth of InAs quantum dots and improvement of density and size distribution

Kinetic Analysis of InAsP by Metalorganic Vapor Phase Epitaxy Selective Area Growth Technique

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