Kinetic Analysis of InAsP by Metalorganic Vapor Phase Epitaxy Selective Area Growth Technique

Abstract

The fundamental kinetics of metal organic vapor phase epitaxy (MOVPE) related ternary compound-InAsP has been systematically investigated by analyzing selective area growth. The overall surface reaction rate constant (k s-overal ) of indium species in this material system is successfully obtained, it shows a composition dependence in which k s-overall increases with the amount of P in InAs 1Àx P x . On the basis of binary kinetics of InAs and InP, k s-overall can be estimated from the linear combination of the surface reaction rate constant (k s ) in the As site and the k s in the P site. Result shows that the linear estimation of k s-overall is consistent with experimental data, which indicates that the incorporations of indium species in the P and As sites should be almost independent of each other. These results revealed that the real surface process of the ternary material system provides significant information and fundamental concepts for further modeling of more complicated quaternary compounds, such as InGaAsP. #

Kinetic analysis of surface adsorption layer for InGaAsP-related binary materials using in situ RAS

“…It is remarkable that the analysis of the transient behavior of the RA signal provides the same rate constant as that for the Langmuir-Hinshelwood surface reaction kinetics. However, the values of k n s and C s0 /t 1 do not agree for InP: k n s $10 À4 mol m À2 s À1 [15] and C s0 /t 1 $10 À5 mol m À2 s À1 . The activation energy of 1/t 1 is approximately three times larger than that of k n s .…”

“…The presence of the surface adsorption layer has been independently suggested by the analysis of surface kinetic analysis of GaAs, InAs, and InP using selective-area growth (SAG) [13][14][15]. For SAG, the distribution of the growth rate on a mm scale is formed around masks on the surface.…”