Charge carrier localization effects on the quantum efficiency and operating temperature range of InAsxP1−x/InP quantum well detectors

Vashisht, Geetanjali; Dixit, V. K.; Porwal, S.; Kumar, Ravi; Sharma, T. K.; Oak, S. M.

doi:10.1063/1.4943031

Cited by 12 publications

(3 citation statements)

References 39 publications

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“…Moreover, the technique is destructive since the sample is no more useful after measurement. In view of this, contactless measurement techniques like photoluminescence (PL), surface photo voltage (SPV) spectroscopy are attractive to probe the surface and interface defects 12 – 14 . It has been qualitatively understood that the linewidth of PL signal is determined by the extent of inhomogeneities and defects of the QW 15 – 19 .…”

Section: Introductionmentioning

confidence: 99%

Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in Al x Ga1−x As/GaAs quantum wells by magneto-photoluminescence

Haldar

Dixit

Vashisht

et al. 2017

Sci Rep

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Effect of charge carrier confinement and ultra-low disorder acquainted in AlGaAs/GaAs multi-quantum well system is investigated via Magneto-photoluminescence spectroscopy. Significant increase of effective mass is observed for the confined exciton in narrow QWs. The foremost reason behind such an observation is due to the induced non-parabolicity in bands. Moreover, as the thickness of the QW are reduced, confined excitons in QW experience atomic irregularities at the hetero-junctions and their effects are prominent in the photoluminescence linewidth. Amount of photoluminescence line-broadening caused by the atomic irregularities at the hetero-junctions is correlated with average fluctuation (δ 1) in QW thickness. The estimated δ 1 for Al0.3Ga0.7As/GaAs QWs are found to be ±(0.14 − 1.6)× ‘one monolayer thickness of GaAs layer’. Further, the strong perturbations due to magnetic field in a system helps in realizing optical properties of exciton in QWs, where magnetic field is used as a probe to detect ultralow defects in the QW. Additionally, the influence of magnetic field on the free and bound exciton luminescence is explained by a simple model. The proposed approach for measuring the interface and volume defects in an ultra-low disordered system by Magneto-PL spectroscopy technique will be highly beneficial in high mobility devices for advanced applications.

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Section: Introductionmentioning

confidence: 99%

Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in Al x Ga1−x As/GaAs quantum wells by magneto-photoluminescence

Haldar

Dixit

Vashisht

et al. 2017

Sci Rep

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“…Therefore, it supports the fact that the localized charge carriers generate the interface electric field opposite to the builtin electric field such that the FKOs are getting suppressed at low temperature regimes. The magnitude of the interface electric field directly depends upon the density of localization states associated at the interfaces, which governs the critical temperature range of FKOs [50]. Further, the integrated PL intensity variation suggests that the localizations are present in all three samples, which subsequently reduced down the PL intensity of ground state QW transition (P 1 peak) below the critical temperature.…”

Section: Resultsmentioning

confidence: 93%

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

Vashisht¹,

Porwal²,

Haldar³

et al. 2022

J. Phys. D: Appl. Phys.

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The impact of interface defect states on the recombination and transport properties of charges in asymmetric modulation-doped InGaAs/GaAs quantum wells is investigated. Three sets of high-mobility InGaAs quantum well structures are systematically designed and grown by the metal-organic vapor phase epitaxy technique to probe the effect of carrier localization on the electro-optical processes. In these structures, a built-in electric field drifts electrons and holes towards the opposite hetero-junctions of the quantum well, where their capture/recapture processes are assessed by temperature-dependent photoreflectance, photoluminescence, and photoconductivity measurements. The strength of the electric field in the structures is estimated from the Franz Keldysh oscillations observed in the photoreflectance spectra. The effects of the charge carrier localization at the interfaces lead to a reduction of the net electric field at a low temperature. Given this, the magnetic field is used to re-distribute the charge carriers and help in suppressing the effect of interface defect states, which results in a simultaneous increase in luminescence and photoconductivity signals. The in-plane confinement of charge carriers in quantum well by the applied magnetic field is therefore used to compensate the localization effects caused due to the built-in electric field. Subsequently, it is proposed that under the presence of large interface defect states, a magnetic field-driven Diamagnetic-Landau shift can be used to estimate the fundamental parameters of charge carriers from the magneto-photoconductivity spectra instead of magneto-photoluminescence spectra. The present investigation would be beneficial for the development of high mobility optoelectronic and spin photonic devices in the field of nano-technology.

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“…SPV spectroscopy has been widely used in the characterization of bulk materials and various nanostructures. − However, there are relatively few reports in the literature on SPV investigation of SiNWs. SPV spectroscopy was used to study the bandgap of vapor–liquid–solid (VLS)-grown undoped SiNWs and SiNWs doped with P and B, and to conclude on the NW crystal structurewurtzite or diamond .…”

Section: Introductionmentioning

confidence: 99%

Effective Removal of Surface Recombination Centers in Silicon Nanowires Fabricated by Metal-Assisted Chemical Etching

Georgiev

Leontis

Nassiopoulou

2018

ACS Appl. Energy Mater.

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High-density silicon nanowires (SiNWs) were fabricated on p-Si substrates by metal-assisted chemical etching (MACE). A chemical cleaning with HF/piranha/HF was used to remove structural defects from the nanowire surface which are at the origin of surface recombination states. Surface photovoltage (SPV) spectroscopy, capacitance− voltage (C−V), and conductance measurements were used to study the SiNW properties and assess the effectiveness of the cleaning process. For the as-grown samples, the analysis of the SPV amplitude and phase spectra demonstrated high density of positively charged surface recombination centers. These centers increase the surface band bending and decrease the minority carrier lifetime and diffusion length. Si nanostructures at the SiNW surface introduce slow traps, as evidenced by the frequency dispersion at accumulation of the C−V curves and the increase of the diffusion length with frequency. All these features are effectively reduced when the SiNWs are subjected to HF/piranha/HF chemical cleaning. Thus, a cheap and effective way is demonstrated to reduce the surface state density and improve the electronic quality of the surface of SiNWs.

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Charge carrier localization effects on the quantum efficiency and operating temperature range of InAsxP1−x/InP quantum well detectors

Cited by 12 publications

References 39 publications

Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in Al x Ga1−x As/GaAs quantum wells by magneto-photoluminescence

Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in Al x Ga1−x As/GaAs quantum wells by magneto-photoluminescence

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

Effective Removal of Surface Recombination Centers in Silicon Nanowires Fabricated by Metal-Assisted Chemical Etching

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