Area-controlled growth of InAs quantum dots and improvement of density and size distribution

Abstract

Lateral wavelength control of In As ∕ In Ga As P ∕ In P (100) quantum dots in the 1.55 μ m region by selectivearea metal organic vapor-phase epitaxy Effects of growth conditions on InAs quantum dot formation by metal-organic chemical vapor deposition using tertiarybutylarsine in pure N 2 ambient Selective growth of InAs self-assembled quantum dots on nanopatterned SiO 2 /Si substrate Appl.

Controlling emission wavelength of double-capped InAs quantum dots by selective MOVPE employing stripe mask array

“…To realize wide wavelength range QDs in a single integrated optical device, a technique to control self-assembled QD size in the same plane is important. As a simple fabrication method for this requirement, a selective area growth by metal-organic vapor phase epitaxy (MOVPE) has been reported [2][3][4], and there were some reports to control the size of the QDs by using this technique [5,6]. In the last report, we have demonstrated that this technique was applied to control the size of self-assembled QDs by using a narrow stripe mask array with a wide mask at one side of the array [7], and have controlled the strain by changing the composition of GaInAs buffer layer [8].…”

Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth

“…These parameters include the size, size distribution, and material composition as well as their spatial location. Self-assembly has been the primary means for fabrication of large area arrays of quantum dots, and confinement of the region of self-assembly has provided limited spatial control of quantum dot growth [14][15][16]. Various techniques have been employed to explicitly define quantum dot nucleation sites and gain control over their emission properties.…”

Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD

“…However, the stochastic nature of the nucleation of S-K QDs makes the task extremely challenging. Efforts have been made to develop methods for position control of QDs, involving substrate lithography prior to growth, and/or selective area growth techniques [6,7], which usually introduce defects into the QDs structures. A more simple but effective approach to achieve lateral ordered InAs QD arrays in a GaAs matrix has been realized by using GaAs (1 0 0) vicinal substrates [8,9].…”