Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth

Elarde, V.C.; Yeoh, T.S.; Rangarajan, Radhika; Coleman, J. J.

doi:10.1016/j.jcrysgro.2004.08.041

Cited by 24 publications

(9 citation statements)

References 24 publications

(20 reference statements)

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“…Growth of low-dimensional structures with FM and SK modes becomes possible by growing material on top of a nano-scale patterned mask, and this is demonstrated in selectively grown NW and QD arrays [79,80]. Growth of low-dimensional structures with FM and SK modes becomes possible by growing material on top of a nano-scale patterned mask, and this is demonstrated in selectively grown NW and QD arrays [79,80].…”

Section: Growth Modesmentioning

confidence: 99%

Selective Area Masked Growth (Nano to Micro)

Kim¹,

Chen²,

Coleman³

2015

Handbook of Crystal Growth

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Section: Growth Modesmentioning

confidence: 99%

Selective Area Masked Growth (Nano to Micro)

Kim¹,

Chen²,

Coleman³

2015

Handbook of Crystal Growth

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“…This results in preferential QD nucleation at the mound peaks, similar to the method of selective area epitaxy of QDs via In segregation. 32,33 We can consider the InGaAs mounds as large, widely spaced "dots." Due to low height-to-base ratio ͑Ͻ0.01͒ of these widely spaced "dots," strain fields extending on the order of microns are expected.…”

Section: Resultsmentioning

confidence: 99%

Control of InAs∕GaAs quantum dot density and alignment using modified buffer layers

Ye¹,

Hanson²,

Reason³

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have investigated the patterning effects of GaAs buffers during the growth of InAs∕GaAs quantum dot (QD) superlattices (SLs). One-, five-, and ten-period QD SLs were deposited on GaAs buffer layers grown at 580°C and/or 500°C, with various annealing steps. High-temperature-grown buffers consist of relatively flat surfaces, while low-temperature-grown buffers contain “mound-like” features elongated along the [11¯0] direction. Isotropic distributions of QDs are observed for QD growth on flat buffers. Interestingly, QD alignment along the [11¯0] direction is observed for QD SL growth on buffers containing mounds. This anisotropic QD alignment is enhanced as the number of QD SLs increases and is dependent on the density of mounds. For flat buffers, the density of QDs decreases with stacking, consistent with the model of Tersoff [J. Tersoff, C. Teichert, and M. G. Lagally, Phys. Rev. Lett. 76, 1675 (1996)]. However, for buffers containing mounds, this effect is compensated by an increase in QD density. We propose a mechanism for QD nucleation, based upon buffer layer patterning leading to an undulated In-enriched GaAs spacer layer following the initial layer of QDs.

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“…Alignment of inorganic crystal on a substrate of different material has attracted much attention recently because of the motivation to search for new functional materials [1][2][3][4][5][6][7][8][9][10][11][12]. To achieve architectural control over formation of structural and functional components, templates are usually used.…”

Section: Introductionmentioning

confidence: 99%