Device-to-circuit modeling approach to Metal – Insulator – 2D material FETs targeting the design of linear RF applications

Toral‐Lopez, Alejandro; Pasadas, Francisco; Marín, Enrique G.; Toral-López, Alejandro; Ruiz, Francisco G.; Jiménez, David; Godoy, A.

doi:10.1109/sispad.2019.8870562

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Graphene Fet As Phase Shifter1

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Cited by 1 publication

(2 citation statements)

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“…Such an equivalent circuit combined with our detailed self-consistent physics-based simulator allows the accurate electrical simulation of 2DM-based FETs for linear RF applications. 27 …”

Section: Methodsmentioning

confidence: 99%

Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

et al. 2021

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“…Such an equivalent circuit combined with our detailed self-consistent physics-based simulator allows the accurate electrical simulation of 2DM-based FETs for linear RF applications. 27 …”

Section: Methodsmentioning

confidence: 99%

Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

et al. 2021

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“…where i and j stand for g (gate), d (drain), and s (source) respectively. The dynamic regime of a three-terminal GFET can be described by just four out of nine intrinsic capacitances [42], [43], C ij in Eq. (1).…”

Section: Graphene Fet As Phase Shiftermentioning

confidence: 99%

A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications

et al. 2020

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We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists of a graphene field-effect transistor (GFET) used in a common source amplifier configuration. The phase of the RF signal is controlled by exploiting the quantum capacitance of graphene and its dependence on the terminal transistor biases. In particular, by independently tuning the applied gate-to-source and drain-to-source biases, we observe that the phase of the signal, in the super-high frequency band, can be varied nearly 200 • with a constant gain of 2.5 dB. Additionally, if only the gate bias is used as control signal, and the drain is biased linearly dependent on the former (i.e., in a completely analogue operation), a phase shift of 85 • can be achieved making use of just one transistor and keeping a gain of 0 dB with a maximum variation of 1.3 dB. The latter design can be improved by applying a balanced branch-line configuration showing to be competitive against other state-of-the-art phase shifters. This work paves the way towards the exploitation of graphene technology to become the core of active analogue phase shifters for high-frequency operation.

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Device-to-circuit modeling approach to Metal – Insulator – 2D material FETs targeting the design of linear RF applications

Cited by 1 publication

References 8 publications

Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications

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