Device simulation of charge collection and single-event upset

Soft-Error Rate of Advanced SRAM Memories: Modeling and Monte Carlo Simulation

“…Figure 3 schematically shows these successive steps in the case of the passage of the energetic charged particle through a reverse-biased n + /p junction. In the following we succinctly describe these different mechanisms, for a detailed presentation we invite the reader to consult references [5][ [16][17][18][19]. Charge deposition (or generation): When the particle strikes the device, an electrical charge along the particle track can be deposited by direct ionization of the target material.…”

“…Modeling and simulating the effects of ionizing radiation has long been used for better understanding the radiation effects on the operation of devices and circuits [16][17][18][19]. In the last two decades, due to substantial progress in simulation codes and computer performances which reduce computation times, simulation reached an increased interest.…”

Highly Focused Ion Beams in Integrated Circuit Testing

“…The charge-collection characteristics of Si junction diodes and transistors in response to an ion strike are often computed using semiconductor device simulation codes [6]. Such codes solve Poisson's equation and the current continuity equations in one, two, or three dimensions, using finite element techniques.…”

Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation

“…As the MOSFET is scaling down, the sensitivity of the integrated circuits to radiation coming from the natural space or present in the terrestrial environment has been found to seriously increase [10][11][12][13]. In nowadays ultra-scaled devices, natural radiation is inducing one of the highest failure rates of all reliability concerns for devices and circuits entering in the area of nanoelectronics [5], [14].…”