Highly Focused Ion Beams in Integrated Circuit Testing

Abstract

__iTn&e event upset, ion beam-induced charge collection, ion microbeam, radiation testing Abstract @~) J~-q b U q a 8~--3The nuclear microprobe has proven to be a useful tool in radiation testing of integrated circuits. This paper reviews single event upset (SEU) and ion beam induced charge collection (IBICC) imaging techniques, with special attention to damage-dependent effects. Comparisons of IBICC measurements with three-dimensional charge transport simulations of charge collection are then presented for isolated p-channel field effect transistors under conducting and non-conducting bias conditions.

Use of focused ion beam (FIB) for advanced interpretation of microindentation test results applied to cementitious composites

“…Typical applications are imaging, cross-section preparation, micro-machining and modifications/repairs of integrated circuits [1][2][3]. In the cross-sectioning mode of the FIB workstation, beam currents in the range of 70-1000 pA are used to etch into the specimen substrate so that sub-surface detail is revealed and can be imaged.…”