Device processing and integration of ferroelectric thin films for memory applications

Achard, H.; Mace, H.; Peccoud, L.

doi:10.1016/0167-9317(95)00108-5

Cited by 22 publications

(4 citation statements)

References 19 publications

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“…Some groups have detected elements Downloaded by [University of New Mexico] at 15:17 14 October 2014 from ferroelectric materials after deposition of ferroelectric films. For example, Achard et al have detected a significant amount of lead contamination on the backside of a wafer after PZT sol-gel deposition and annealing at 700 • C [27].…”

Section: Impact Of Ferroelectric Processing On Silicon Devices [14]mentioning

confidence: 97%

Key Integration Techniques and Issues for Silicon-Based Ferroelectric Devices

Ren

Wei

Liu

et al. 2004

Integrated Ferroelectrics

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Some key integration techniques and issues have been discussed in this paper including fabrication techniques of ferroelectric films, electrode, interface and diffusion problems, etching techniques, stress, hydrogen-induced degradation and barrier interlayer technique, impact of the ferroelectric processing on silicon devices and packaging for the integrated ferroelectric devices. Mechanisms for the breakdown of ferroelectric devices have been analyzed and improved ways have been suggested.

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Section: Impact Of Ferroelectric Processing On Silicon Devices [14]mentioning

confidence: 97%

Key Integration Techniques and Issues for Silicon-Based Ferroelectric Devices

Ren

Wei

Liu

et al. 2004

Integrated Ferroelectrics

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“…The character of ferroelectric thin films has been of growing interest because of their significance in the field of microelectronics [1] and optoelectronics [2], such as random access memory [3]. However, the surface effect is one of the important phenomena observed in ferroelectric thin films that needs further research [4].…”

Section: Introductionmentioning

confidence: 99%

Polarization properties of ferroelectric thin films on transverse ising model

Sun

Lü

Chen

et al. 2008

Physica Status Solidi (b)

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By taking into account surface transition layers (STL), an improved transverse ising model (TIM) with a depolarization field effect also considered is used to describe the polarization properties of ferroelectric thin films in the framework of the mean‐field approximation. Functions representing the intralayer and interlayer couplings are introduced to characterize STL, which makes the model more realistic compared to previous treatment of surface layers using uniform surface exchange interactions and a transverse field. By comparison with the results obtained from the traditional treatments for the thin films using only the single surface layer (SSL), some new results are derived by adding the STL in the model. The results also show that the effect of the transverse field is notable when tunneling is essential. The influence of the depolarization field is to flatten the spontaneous polarization profile and make the polarization distribution of films more homogeneous, which is consistent with the results obtained from the Ginzburg–Landau–Devonshire (GLD) theory. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Ferroelectric thin films have been extensively investigated for a variety of applications ranging from non-volatile memories (NV-FeRAM) to micro-electro-mechanical systems (MEMS) [1,2]. However, most of these ferroelectric thin films applications require processing compatibility with the major fabrication procedures used in semiconductor industry [3][4][5]. One of the main ferroelectric thin films incompatibilities is their relatively high crystallization temperature, typically over 600 8C; this temperature combined with an oxygen atmosphere often causes metal oxidation (specifically of the titanium interlayer commonly used for adhesion purposes [6]).…”

Section: Introductionmentioning

confidence: 99%