Device physics of capacitive MEMS

Felnhofer, D.; Khazeni, K.; Mignard, M.; Tung, Yeh‐Jiun; Webster, James R.; Chui, Clarence; Gusev, Evgeni

doi:10.1016/j.mee.2007.04.118

Cited by 21 publications

(12 citation statements)

References 26 publications

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“…This system took advantage of white backlight for transmissive color interference. The white backlight could be natural or artificial and the interference style could also be designed for a reflective one [ 24 ], which shows application on non-transparent object. An attractive application idea can be the monitoring system for large area flat panel display industry such as glass.…”

Section: Discussionmentioning

confidence: 99%

A High Sensitivity Three-Dimensional-Shape Sensing Patch Prepared by Lithography and Inkjet Printing

Huang

Kuo

Stach

et al. 2012

Sensors

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A process combining conventional photolithography and a novel inkjet printing method for the manufacture of high sensitivity three-dimensional-shape (3DS) sensing patches was proposed and demonstrated. The supporting curvature ranges from 1.41 to 6.24 × 10−2 mm−1 and the sensing patch has a thickness of less than 130 μm and 20 × 20 mm2 dimensions. A complete finite element method (FEM) model with simulation results was calculated and performed based on the buckling of columns and the deflection equation. The results show high compatibility of the drop-on-demand (DOD) inkjet printing with photolithography and the interferometer design also supports bi-directional detection of deformation. The 3DS sensing patch can be operated remotely without any power consumption. It provides a novel and alternative option compared with other optical curvature sensors.

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Section: Discussionmentioning

confidence: 99%

A High Sensitivity Three-Dimensional-Shape Sensing Patch Prepared by Lithography and Inkjet Printing

Huang

Kuo

Stach

et al. 2012

Sensors

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“…It indicates that dielectric charging has been largely reduced by np-AAO film. When charge is present in the MEMS dielectric stack, the hysteresis curve will become asymmetric and the offset voltage will shift from zero voltage [1]. Therefore, according to the symmetric curves in Fig.6b, this study can successfully prevent the accumulation of the charge on dielectric stack of the fabricated device.…”

Section: Measurement Resultsmentioning

confidence: 88%

“…The FPI can be equally Fig.6b. The polarities offset V offset = (V a+ +V a-)/2 [1] (where V a+ is the positive pull-in voltage and V a-is the negative pull-in voltage) is only -0.15V. It indicates that dielectric charging has been largely reduced by np-AAO film.…”

Section: Measurement Resultsmentioning

confidence: 98%

Implementation of electrostatically controlled Fabry-Perot interferometer using nanoporous anodic aluminum oxide layer

Fang

2013

2013 Transducers &Amp; Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems

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This study presents the use of nanoporous anodic aluminum oxide (np-AAO) for Fabry-Perot interferometer (FPI). The merits of this np-AAO Fabry-Perot interferometer are as follows, (1) in-use stiction of the actuation np-AAO membrane can be reduced by the nanoporous textures, (2) dielectric charging can be largely reduced by np-AAO material in this study, thus the offset voltage of the polarities close to zero and hysteresis curves are symmetric [1], (3) driving (pull-in) voltage can be reduced due to superior dielectric constant (ε=7.05) of np-AAO [2], and (4) in addition, refractive index can be adjusted by pore size [3]. The tests demonstrate the performance of presented Fabry-Perot interferometer.

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“…Of these devices, because of its multimedia applications, the flexible display is more attractive than other flexible electronic devices. Electrophoretic [13], [14], electrowetting [15], [16], electrochromic [17], [18], and microelectromechanical systems [19], [20] all have specific applications. Portable information display systems, such as cell phones and tablet computers, are rapidly replacing conventional devices such as televisions and desktop computers.…”

Section: Introductionmentioning

confidence: 99%

Mutual Capacitive Flexible Tactile Sensor for 3-D Image Control

Wang

Chen

et al. 2013

J. Microelectromech. Syst.

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This study develops a novel mutual capacitive tactile sensor for a touch panel with shifted finger-type electrodes with high sensitivity and other benefits. This tactile sensor detects normal, shear, and pulling forces with good simultaneous visible transmittance and flexibility for the next generation of 3-D flexible portable displays. The tactile sensor is composed of polyethylene terephthalate, gold, indium tin oxide, and polydimethylsiloxane. It exhibits 75% transmittance on average in the visible region, 0.04-N force resolution, and 1.5-pF/N responsiveness. The finger-type electrode design improves sensitivity by 112%-4100%, depending on the number of fingers and shifted direction. This study conducts theoretical calculations, simulations, fabrication, and measurements.[2012-0243]

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Device physics of capacitive MEMS

Cited by 21 publications

References 26 publications

A High Sensitivity Three-Dimensional-Shape Sensing Patch Prepared by Lithography and Inkjet Printing

A High Sensitivity Three-Dimensional-Shape Sensing Patch Prepared by Lithography and Inkjet Printing

Implementation of electrostatically controlled Fabry-Perot interferometer using nanoporous anodic aluminum oxide layer

Mutual Capacitive Flexible Tactile Sensor for 3-D Image Control

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