This study designs and implements a proximity sensor consisting of inductive and capacitive sensing units. These two sensing units are vertically monolithic integrated on a single chip using the micro-fabrication processes. In addition, low-temperature fabricated nanoporous anodic aluminum oxide (np-AAO) is employed as the dielectric layer to enhance the performance of capacitive sensing. The characteristics of the presented vertically monolithic integrated inductive and capacitive proximity sensor are as follows: (1) enlarged sensing distance of conductive objectives: capacitive sensing unit for short distance detection and inductive sensing unit for long distance detection, (2) non-conductive object can be detected by the capacitive sensing unit, (3) fringe effect capacitive sensing is enhanced by the spiral coil electrode and (4) np-AAO has good dielectric properties (the dielectric constant is 11.9 in this study) for capacitive sensing. In application, various materials (including metal, plastic and a human finger) have been successfully detected by the presented sensor. Preliminary results demonstrate that the typical fabricated proximity sensor has a sensing range of 0.5–5 mm for the metal rod. In comparison, the inductive and capacitive sensing units have the sensing ranges of 1.5–5 and 0.5–3 mm, respectively. Moreover, the non-conductive plastic rod can be detected by the capacitive sensing unit.

Chiral halide perovskites have attracted considerable attention because of their chiroptical, second-harmonic generation, and ferroelectricity properties and their potential application in chiroptoelectronics and chiral spintronics. However, the fundamental research of these properties is insufficient. In this work, chiral perovskites were synthesized using precursor solutions with various stoichiometric ratios ⟨n⟩. The chiral perovskite film prepared from the solution with ⟨n⟩ = 1 is composed of (R-/S-/rac-MBA) 2 PbBr 4 , whereas the films prepared from the solutions with ⟨n⟩ larger than 1 are a mixture of (R-/S-/rac-MBA) 2 (CsMA) n−1 Pb n Br 3n+1 with n = 1 and large n values. A photoluminescence quantum yield of approximately 90 was obtained. Symmetric circular dichroism (CD) spectra were observed without an external magnetic field. Under various magnetic fields, magnetic field-induced CD features are superimposed with the intrinsic chirality-induced CD features. For the ⟨n⟩ = 1 chiral perovskite film, the energy level splitting induced by chiral molecules are a few 10 μeV, whereas the energy level splitting induced by magnetic fields are at the range of ∼−250 to ∼250 μeV. Circularly polarized photoluminescence spectra were observed at room temperature and associated with the spin-preserved energy funneling from highly energetic phases to the lower energetic phases.

This study presents an inductive proximity sensor implemented through the integration of nano-texture metal-spiral and np-AAO (anodic aluminum oxide (AAO) with nanopores) insulation layer on Si-substrate. The advantages of such nano-structure inductive proximity sensor are as follows, (1) The surface area of nano-texture metal-spiral is increased. Thus, the performance of inductive sensor is increased; and (2) The nano-texture metal-spiral consists of nanopores transferred from the AAO template. Thus, the eddy current on metal-spiral induced by lower electrode can be reduced by the nanoporous film. In applications, inductive proximity sensor consisted of nano-texture Au-spiral on np-AAO is implemented.Measurements demonstrate the performance of the nano-texture proximity sensor is significantly improved. KEYWORDSAnodic aluminum oxide (AAO), Inductive sensor, Proximity sensor 978-1-4577-0156-6111/$26.00 ©2011 IEEE

Short-wave infrared (SWIR) light is suitable for image recognition and biomedical applications due to the ability to perform unique absorption of material components. In this study, the partial inversion of a spinel structure was modified through cation substitution to induce an inverse behavior and charge variation. For MgGa 2 O 4 , the substitution of Ga 3+ with Sn 4+ expanded lattice parameters (a, b, c, and V), and Mg 2+ was used to achieve charge balance. When the concentration of Sn increased, the T 2g vibrational mode exhibited a significant decline at 638 cm −1 , which was ascribed to GaO 4 , and another retentive T 2g vibrational mode at 542 cm −1 was ascribed to MgO 4 . This demonstrated that MgGa 2 O 4 was a local structure with partial inversion. The clusters of (Ga/MgO 4 −MgO 4 ) from y = 0.5 to 0.7 revealed a disordered broadband signal in the same Raman shift, and octahedral sites retained their ordering structure. The local structure induced Ni 2+/3+ to coexist and transform into pure Ni 2+ at octahedral sites through increasing Sn concentration. The time-resolved photoluminescence and emission spectrum revealed high energy transfer efficiency (>90%). The long SWIR emission achieved through Sn substitution enabled the fabrication of an SWIR light-emitting diode device; this device, along with a two-dimensional convolutional neural network, increased the accuracy of an artificial intelligencebased image recognition system from 72.2% to 94.4%. This study promotes research on sequences for inverse tetrahedral sites such as Mg, Al, Ga, In, and other transition metals in spinel structures. In addition, the applicability of artificial intelligence to complete everyday tasks was demonstrated.

This study presents the use of nanoporous anodic aluminum oxide (np-AAO) for Fabry-Perot interferometer (FPI). The merits of this np-AAO Fabry-Perot interferometer are as follows, (1) in-use stiction of the actuation np-AAO membrane can be reduced by the nanoporous textures, (2) dielectric charging can be largely reduced by np-AAO material in this study, thus the offset voltage of the polarities close to zero and hysteresis curves are symmetric [1], (3) driving (pull-in) voltage can be reduced due to superior dielectric constant (ε=7.05) of np-AAO [2], and (4) in addition, refractive index can be adjusted by pore size [3]. The tests demonstrate the performance of presented Fabry-Perot interferometer.

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This study presents the approach to implement the electrostatically-controlled thin film optical filter by using a nanoporous anodic aluminum oxide (np-AAO) layer as the key suspended micro structure. The bi-stable optical filter operates in the visible spectral range. In this work, the presented bi-stable optical filter has averaged reflectivity of 60%, and the central wavelengths are 580 and 690 nm respectively for on and off states. The presented np-AAO layer offers the following merits for the thin film optical filter: (1) material properties of np-AAO film, such as refractive index, elastic modulus and dielectric constant, can be easily changed by a low temperature pore-widening process, (2) in-use stiction of the suspended np-AAO structure can be reduced by the small contact area of nanoporous textures, (3) driving (pull-in) voltage can be reduced due to a large dielectric constant (εAAO is 7.05) and small stiffness of np-AAO film and (4) dielectric charging can be reduced by the np-AAO material; thus the offset voltage is small. The study reports the design, fabrication and experimental results of the bi-stable optical filter to demonstrate the advantages of the presented device. The np-AAO material also has the potential for applications of other electrostatic drive micro devices.