Device and Compact Circuit-Level Modeling of Graphene Field-Effect Transistors for RF and Microwave Applications

Sang, Lei; Xu, Yue; Wu, Yun; Chen, Rongmin

doi:10.1109/tcsi.2018.2793852

Cited by 14 publications

(11 citation statements)

References 31 publications

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“…The extracted values are close to the reference ones obtained by other more intricate and technology-specific methods. The mean relative deviation of R C,1 and reference values, excluding the 150 nm-long device [15], is between 6% and 27%. However, not all the reference values are validated in contrast to the procedure included here (see Fig.…”

Section: Fabricated Gfet Technologiesmentioning

confidence: 94%

“…3). The difference between the extracted and reference data of the 150 nm-long device [15] can be explained by a strong impact of the Schottky barrier in the device performance which is not considered in the reference parameter in contrast to R C,1 (and R C,2 ) here which embraces the Schottky barrier contribution.…”

Section: Fabricated Gfet Technologiesmentioning

confidence: 95%

“…Figure 3: Transfer characteristics within the bias range where the extraction methods have been applied of devices with different gate lengths: 60 nm [17], 150 nm [15], 150 nm [16], 250 nm [2], 300 nm [40] and 2000 nm [8]. Symbols represent experimental data and lines represent Eq.…”

Section: Fabricated Gfet Technologiesmentioning

confidence: 99%

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Contact resistance extraction of graphene FET technologies based on individual device characterization

Pacheco-Sanchez,

Feijoo,

Jiménez

2020

Preprint

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Straightforward contact resistance extraction methods based on electrical device characteristics are described and applied here to graphene field-effect transistors from different technologies. The methods are an educated adaptation of extraction procedures originally developed for conventional transistors by exploiting the drift-diffusion-like transport in graphene devices under certain bias conditions. In contrast to other available approaches for contact resistance extraction of graphene transistors, the practical methods used here do not require either the fabrication of dedicated test structures or internal device phenomena characterization. The methodologies are evaluated with simulation-based data and applied to fabricated devices. The extracted values are close to the ones obtained with other more intricate methodologies. Bias-dependent contact and channel resistances studies, bias-dependent high-frequency performance studies and contact engineering studies are enhanced and evaluated by the extracted contact resistance values.

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Section: Fabricated Gfet Technologiesmentioning

confidence: 94%

Section: Fabricated Gfet Technologiesmentioning

confidence: 95%

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Contact resistance extraction of graphene FET technologies based on individual device characterization

Pacheco-Sanchez,

Feijoo,

Jiménez

2020

Preprint

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“…Research in graphene electronics has been extensively directed to the development of RF transistors [1][2][3][4][5][6][7][8][9]. Transistors are the basic building blocks of integrated circuits; they determine their maximal operational frequencies and overall performances.…”

Section: Introductionmentioning

confidence: 99%

A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology

et al. 2020

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This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active balun concept takes advantage of the GFET ambipolar behavior. It is realized using an advanced silicon carbide (SiC) based bilayer graphene FET technology having RF performances of about 20 GHz. Balun circuit measurement demonstrates its high frequency capability. An upper limit of 6 GHz has been achieved when considering a phase difference lower than 10° and a magnitude of amplitude imbalance less than 0.5 dB. Hence, this circuit topology shows excellent performance with large broadband performance and a functionality of up to one-third of the transit frequency of the transistor.

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“…Advances and promises in the development of the terahertz power sources over the last two decades [1]- [3], as well as emerging commercial applications, have led to the increased efforts in the development of circuits and systems for use at the submillimeter wave (low-terahertz) frequencies. Components, including antennas [4]- [6], waveguides [6]- [8], filters [9], [10], diodes and transistors [11]- [13], and photonic devices [14]- [16], are being customized for use in this spectral region. Schottky diodes, used in mixers, multipliers, phase shifters, and detectors, have to be designed using approaches aimed at reducing the capacitances, in efforts to extend the frequencies of operation up to 1.5 THz [11].…”

Section: Introductionmentioning

confidence: 99%

Design methodology for graphene tunable filters at the sub-millimeter-wave frequencies

Ilić

Bukvic

Budimir

et al. 2019

Solid-State Electronics

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Tunable components and circuits, allowing for the fast switching between the states of operation, are among the basic building blocks for future communications and other emerging applications. Based on the previous thorough study of graphene based resonators, the design methodology for graphene tunable filters has been devised, outlined, as well as explained through an example of the fifth order filter. The desired filtering responses can be achieved with the material loss not higher than the loss corresponding to the previously studied single resonators, depending mostly on the quantity of graphene per resonator. The proposed design method relies on the detailed design space mapping; obtained data gives an immediate assessment of the feasibility of specifications with a particular filter order, maximal passband ripple level, desired bandwidth, and acceptable losses. The design process could be further automated by the knowledge based approach using the collected design space data.

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Device and Compact Circuit-Level Modeling of Graphene Field-Effect Transistors for RF and Microwave Applications

Cited by 14 publications

References 31 publications

Contact resistance extraction of graphene FET technologies based on individual device characterization

Contact resistance extraction of graphene FET technologies based on individual device characterization

A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology

Design methodology for graphene tunable filters at the sub-millimeter-wave frequencies

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