Contact resistance extraction of graphene FET technologies based on individual device characterization
Anibal Pacheco-Sanchez,
Pedro C. Feijoo,
David Jiménez
Abstract:Straightforward contact resistance extraction methods based on electrical device characteristics are described and applied here to graphene field-effect transistors from different technologies. The methods are an educated adaptation of extraction procedures originally developed for conventional transistors by exploiting the drift-diffusion-like transport in graphene devices under certain bias conditions. In contrast to other available approaches for contact resistance extraction of graphene transistors, the pr… Show more
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