Deviatoric stresses promoted metallization in rhenium disulfide

Abstract

The structural, vibrational and electronic properties of ReS 2 were investigated up to ~34 GPa by Raman spectroscopy, AC impedance spectroscopy, atomic force microscopy and highresolution transmission electron microscopy, combining with first-principle calculations under two different pressure environments. The experimental results showed that ReS 2 endured a structural transition at ~2.5 GPa both under non-hydrostatic and hydrostatic conditions. We found that a metallization occurred at ~27.5 GPa under non-hydrostatic conditions and at ~35.4 GPa under hydrostatic conditions. The occurrence of distinct metallization point attributed to the influence of deviatoric stresses, which significantly affected the layered structure and the weak van der Waals interaction for ReS 2 .

Structural and High-Pressure Properties of Rheniite (ReS2) and (Re,Mo)S2

“…With regard to experimental determinations, our results seem to confirm the observations of Ref. [26], where the structural phase transition was found around 2.5 GPa by means of Raman spectroscopy. In contrast, most experimental works have reported much larger phase transitions, typically above 5 GPa and up to 15 GPa [21][22][23]27].…”

Pressure-induced coupled structural–electronic transition in SnS2 under different hydrostatic environments up to 39.7 GPa

“…As a matter of fact, our previous studies have already revealed the inuence of deviatoric stress on the pressure point of phase transition for other layered metallic chalcogenides (e.g., MoS 2 , MoSe 2 , ReS 2 , As 2 Te 3 ). [19][20][21][22] The E g peak of SnS 2 displayed an obvious broadening phenomenon at the pressure higher than 12.7 GPa, and resulting in a feeble peak splitting under hydrostatic condition. However, as for the nonhydrostatic condition, the E g peak of sample was continuously variated up to the pressure of 27.1 GPa.…”

“…On the other hand, previous investigations have already disclosed that hydrostaticity in the sample chamber of a DAC is capable of changing the pressure point of phase transition by several gigapascals for some layered metallic chalcogenides (e.g., MoS 2 , ReS 2 , MoSe 2 , As 2 Te 3 , Ga 2 S 3 ). [18][19][20][21][22] However, the inuence of hydrostaticity on the phase transition point of SnS 2 is unclear until now and thus a comprehensive investigation on SnS 2 under different hydrostatic environments is required.…”

Pressure-induced metallization in MoSe2 under different pressure conditions

“…14 Zhuang et al also found that metallization of ReS 2 under the hydrostatic condition occurred at a much higher pressure point than that under the non-hydrostatic condition. 15 As a similar layered structural diselenide, viz. MoSe 2 , it is possible that its highpressure vibrational and electrical properties will be affected by different hydrostatic environments.…”