Applications of Laser Plasma Radiation II 1995
DOI: 10.1117/12.220971
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Developments of a high-power, low-contamination laser-plasma source for EUV projection lithography

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Cited by 6 publications
(3 citation statements)
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“…All experiments were performed at the laser plasma source and EUV imaging facility at the FOM Institute for Plasma Physics Rijnhuizen [4,7]. To generate the plasmas, an application-speciÐc KrF laser (Lambda Physik LPX350cc) was employed in the injection-locked mode of operation.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…All experiments were performed at the laser plasma source and EUV imaging facility at the FOM Institute for Plasma Physics Rijnhuizen [4,7]. To generate the plasmas, an application-speciÐc KrF laser (Lambda Physik LPX350cc) was employed in the injection-locked mode of operation.…”
Section: Methodsmentioning
confidence: 99%
“…Absolute calibration of the spectrograph was performed by direct comparison of the spectral intensity at j \ 13.5 nm with absolute intensity measurements using a technique with multilayer mirror and an XUV p-i-n diode as a detector (Fig. 1) [4,10]. The spherical Mo/Si multilayer mirror (2d-spacing \13.5 nm, spectral selectivity j/*j \ 25) monochromatized the broadband plasma radiation and directed the radiation to the detector.…”
Section: Methodsmentioning
confidence: 99%
“…One of the most important and challenging problems facing the extreme ultraviolet lithography (EUVL) community at present is the choice of a stable, debris free and high efficiency plasma source for use at soft x-ray wavelengths of 13.5 nm. This wavelength regime has approximately 71% reflectivity for Mo/Si multilayer coated optics [1] and so is the preferred choice for the next generation of Extreme Ultraviolet Technologies [2][3][4].…”
Section: Introductionmentioning
confidence: 99%