Developments in Gigascale Silicon Optical Modulators Using Free Carrier Dispersion Mechanisms

Basak, J.; Liao, Ling; Liu, Ansheng; Rubin, Doron; Chetrit, Yoel; Nguyen, Hat; Samara-Rubio, Dean; Cohen, Rami; Izhaky, Nahum; Paniccia, Mario

doi:10.1155/2008/678948

Cited by 27 publications

(13 citation statements)

References 44 publications

(58 reference statements)

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“…Potentially CMOS compatible, low-cost, monolithic silicon WDM modulator chips have been reported [1,2]. However, an optically broadband silicon-based modulator usually has a large footprint and requires a relatively high driving voltage and hence high power consumption for sufficient extinction ratio [3]. Alternatively, purely III-V WDM modulator chips have been demonstrated [4, 5].…”

Section: Introductionmentioning

confidence: 99%

5 x 20 Gb/s heterogeneously integrated III-V on silicon electro-absorption modulator array with arrayed waveguide grating multiplexer

Fu¹,

Cheng²,

Huang³

et al. 2015

Opt. Express

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Abstract:We present a five-channel wavelength division multiplexed modulator module that heterogeneously integrates a 200GHz channelspacing silicon arrayed-waveguide grating multiplexer and a 20Gbps electro -absorption modulator array, showing the potential for 100 Gbps transmission capacity on a 1.5x0.5 mm 2 footprint. ©2015 Optical Society of America IntroductionWavelength division multiplexing (WDM) modules are of key importance for realizing high aggregate bitrate optical networks and optical interconnects. WDM transmitters and receivers require low cost and high performance devices for maximal bandwidth usage and high energy-efficiency. For the key opto-electronic components in a WDM system, both silicon and III-V based devices are available. Potentially CMOS compatible, low-cost, monolithic silicon WDM modulator chips have been reported [1,2]. However, an optically broadband silicon-based modulator usually has a large footprint and requires a relatively high driving voltage and hence high power consumption for sufficient extinction ratio [3]. Alternatively, purely III-V WDM modulator chips have been demonstrated [4, 5]. Although they are more efficient than silicon modulators, the monolithic integration with passive wavelength division multiplexing devices, e.g. arrayed waveguide gratings (AWG) and etched diffractive gratings (EDG) is not straightforward. In order to overcome these issues, a hybrid silicon platform that combines the advantages of III-V based materials and silicon is being studied. III-V/Si hybrid active devices with excellent performance, such as hybrid silicon narrow linewidth lasers [6], high-speed modulators [7], and high-speed detectors [8] have already been demonstrated. The highest speed modulators on silicon were achieved by transferring a III-V epitaxy stack onto a SOI wafer to realize a 67GHz bandwidth traveling-wave hybrid silicon electro-absorption modulator (EAM) [7]. These hybrid devices can be integrated together to build up more complex on-chip photonic modules [9, 10] on silicon-based substrates, which shows its potential for high density, high performance WDM transmitters and receivers for optical communication networks and multi-CPU optical interconnects in the future.

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Section: Introductionmentioning

confidence: 99%

5 x 20 Gb/s heterogeneously integrated III-V on silicon electro-absorption modulator array with arrayed waveguide grating multiplexer

Fu¹,

Cheng²,

Huang³

et al. 2015

Opt. Express

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“…Since the modulator is based on a single hybrid plasmonic waveguide, it is more compact than a Mach-Zehnder Interferometer (MZI) modulator where two separate waveguides are necessary to enable the optical interference. It should be noted that the proposed modulator is essentially an interference structure rather than a resonance one, therefore allowing for broadband operation [22], [23]. Fig.…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of a Miniature Intensity Modulator Based on a Silicon-Polymer-Metal Hybrid Plasmonic Waveguide

et al. 2014

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We propose a miniature optical intensity modulator based on a silicon-polymermetal hybrid plasmonic waveguide. Benefiting from the high mode confinement of hybrid plasmonic waveguide and the high linear electro-optic effect of polymer material, the intensity modulator is ultra-compact with a length of only $13 m. The device is optimized using numerical simulations based on the finite element method (FEM). The modulator exhibits a large modulation bandwidth of 90 GHz, a modulation depth of 12 dB at 6 V, and low power consumption of 24.3 fJ/bit.

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“…The bandwidth of the silicon modulator is limited due to the lack of efficient electro-optic effect and electroabsorption effect in pure silicon. Most of the reported silicon modulators rely on the free carrier plasma dispersion effect [4][5][6][7]. In those cases, a weak change of the refractive index obtained by carrier accumulation, injection or depletion is utilized in a Mach-Zehnder interferometer [4,5] or a microring resonator [6] to achieve intensity modulation.…”

Section: Introductionmentioning

confidence: 99%

“…In those cases, a weak change of the refractive index obtained by carrier accumulation, injection or depletion is utilized in a Mach-Zehnder interferometer [4,5] or a microring resonator [6] to achieve intensity modulation. 40 Gbit/s transmission has been demonstrated on a carrier-depletionbased silicon modulator, although that device has a large footprint and requires high driving voltage for a sufficient extinction ratio [7].…”

Section: Introductionmentioning

confidence: 99%

50 Gb/s hybrid silicon traveling-wave electroabsorption modulator

Tang¹,

Chen²,

Jain³

et al. 2011

Opt. Express

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Abstract:We have demonstrated a traveling-wave electroabsorption modulator based on the hybrid silicon platform. For a device with a 100 μm active segment, the small-signal electro/optical response renders a 3 dB bandwidth of around 42 GHz and its modulation efficiency reaches 23 GHz/V. A dynamic extinction ratio of 9.8 dB with a driving voltage swing of only 2 V was demonstrated at a transmission rate of 50 Gb/s. This represents a significant improvement for modulators compatible with integration of silicon-based photonic integrated circuits. ©2011 Optical Society of America

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Developments in Gigascale Silicon Optical Modulators Using Free Carrier Dispersion Mechanisms

Cited by 27 publications

References 44 publications

5 x 20 Gb/s heterogeneously integrated III-V on silicon electro-absorption modulator array with arrayed waveguide grating multiplexer

5 x 20 Gb/s heterogeneously integrated III-V on silicon electro-absorption modulator array with arrayed waveguide grating multiplexer

Design and Analysis of a Miniature Intensity Modulator Based on a Silicon-Polymer-Metal Hybrid Plasmonic Waveguide

50 Gb/s hybrid silicon traveling-wave electroabsorption modulator

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