“…Large fill-factor structures have been produced in LFoundry Srl [14], ams AG [15] and TSI Semiconductors Corp [16], in the framework of the ATLAS upgrade and the Mu3e experiments, like the H35Demo device [17], implemented in the ams 350 nm process, the LF-Monopix device [11], implemented in the LFoundry 150 nm process, or the MuPix7 and MuPix8 devices [9], implemented in the ams and TSI 180 nm processes, to mention a few ones. Regarding the small fill-factor structures, some devices of this type have been also produced in TowerJazz Ltd. [18] following the TJ 180 nm process as the TJ-Monopix device [11] or the TJ-Malta device [13]. A special type of CMOS technology, the High Voltage Silicon On Insulator, is also available at X-FAB Semiconductor Foundries AG [19], several devices have been implemented in the XFAB 180 nm process, like the XTB01 device [20].…”