Overview of CMOS Sensors for Future Tracking Detectors

Abstract

Depleted Complementary Metal-Oxide-Semiconductor (CMOS) sensors are emerging as one of the main candidate technologies for future tracking detectors in high luminosity colliders. Their capability of integrating the sensing diode into the CMOS wafer hosting the front-end electronics allows for reduced noise and higher signal sensitivity, due to the direct collection of the sensor signal by the readout electronics. They are suitable for high radiation environments due to the possibility of applying high depletion voltage and the availability of relatively high resistivity substrates. The use of a CMOS commercial fabrication process leads to their cost reduction and allows faster construction of large area detectors. In this contribution, a general perspective of the state of the art of CMOS detectors for High Energy Physics experiments is given. The main developments carried out with regard to these devices in the framework of the CERN RD50 collaboration are summarized.

Advanced System-on-Chip Field-Programmable-Gate-Array-Powered Data Acquisition System for Pixel Detectors

“…Furthermore, in terms of hardware, the adaptation would require the modification of the adapter card (DTB adapter for ROC4SENS) in order to connect the corresponding chip to the custom board PCB of the proposed system. In the case of detectors with digital outputs [ 38 , 39 , 40 ], the hardware adaptations would go beyond the changes mentioned above, as they would also involve the elimination of the ADCs and the direct connection of the digital outputs to the FPGA SoC. In terms of software, the changes would be minimal and would involve adapting the configuration parameters for the new chip and visualizing the results for different pixel array sizes.…”

A CMOS-MEMS Pixel Sensor for Thermal Neutron Imaging

“…For this purpose, a CMOS process enabling the full depletion of a HR p-type substrate is required. Possible solutions could be CMOS technologies used so far for depleted Monolithic Active Pixel Sensors (MAPS), where the electronic circuits are insulated from the HR substrate via deep p-wells [ 20 ]. Our choice was to use the 0.2 μm CMOS single Silicon-on-Insulator (SOI) technology developed by the Japanese High-Energy Accelerator Laboratory, KEK, and produced by the Lapis Semiconductor Co. Ltd. [ 30 ].…”

“…This is the first microstructured CMOS monolithic radiation sensor ever reported, with potential impact on neutron imaging and beyond. In fact, from the technological point of view, DEEP_3D can be considered a first attempt in the direction to combine the advantages of 3D detectors, with their excellent radiation hardness [ 19 ], and monolithic design with high performance and compactness [ 20 ].…”

Silicon Radiation Detector Technologies: From Planar to 3D

“…Although silicon detectors are relatively simple devices, they require custom fabrication technologies to optimize their electrical and functional characteristics. Only recently, following the significant progress in CMOS image sensors, pixel detectors made with CMOS technologies (the so-called Monolithic Active Pixels) have proved to yield satisfactory performance [3]. In the future, there will likely be a greater utilization of CMOS pixels, particularly in X-ray imaging and charged particle tracking.…”