Development of the field-effect mobility in thin films of F16PcCu characterized by electrical in situ measurements during device preparation

Strategy for preparation of transparent organic thin film transistors with PEDOT:PSS electrodes and a polymeric gate dielectric

“…The surface showed height fluctuations of only up to 10 nm, less than the average film thickness of 20 nm. The grains are uniform in size and shape and form a continuous film without pinholes or obvious discontinuities, providing a semiconductor suitable for OFET with good conduction pathways as also obtained in earlier studies which showed a similar morphology of F 16 PcCu thin films [26]. The output characteristics of a device prepared in top-contact/ bottom gate OFET geometry directly after deposition of F 16 PcCu are shown in Fig.…”

“…Electrical characteristics (a, c) and photograph (b) of finished bottom-contact/top-gate FETs. by the same method, but on the oxidized surface of a silicon wafer [26], which gave values for the electron mobility around 1 Á 10 À 3 cm 2 V À 1 s À 1 . The thickness of the gate insulator in these studies was 300 nm, so in direct comparison, the field-effect is higher and as expected, leads to on/off ratios around 10 4 .…”

“…The substrates were transferred to vacuum where the organic semiconductor F 16 PcCu was deposited at an average film thickness of 20 nm in the final preparation step. The devices were left in vacuum at room temperature for three days in order to condition the semiconductor towards higher film quality and improved performance as indicated in previous work [26].…”

Diffusion-controlled electrochemical growth of porous zinc oxide on microstructured electrode band arrays

“…Arrays of parallel interdigitated 50 nm thick bands of Ag or Au with a width W e of 5.16, 10.27, 20.47, or 40.50 lm separated by a gap of width W g of 4.84, 9.73, 19.53, or 39.50 lm as determined by scanning electron microscopy (SEM) and profilometry were prepared by photolithography (5, 10, 20, or 40 lm structure size) on thermally oxidized (300 nm) Si wafers (Wacker) as described previously [23]. Bands of Ag (Au) were used for the experiments reported in Fig Electrochemical deposition was performed by an IviumStat potentiostat on 12 mm 9 10 mm pieces of the processed wafers with a set of two interdigitated metal band electrodes mounted on a rotating disk (radiometer analytical) as working electrode.…”

Influence of an Applied Electric Field on the Conduction Characteristics of a Bithienyl-Capped Biphenylene and Biphenyl-Capped Oligothiophenes in Organic Field-Effect Transistor Structures

“…Microstructured electrode arrays (20 µm and 40µm structure size) of gold were prepared as described earlier [8]. Thin films of PPTPP, PPTTPP, and TTPPTT were vapor-deposited and analyzed during growth in their output characteristics dependent on the gate voltage as also described earlier [8] at an applied field of 10 V and at a substrate temperature of 100 °C in a first series of experiments.…”