Strategy for preparation of transparent organic thin film transistors with PEDOT:PSS electrodes and a polymeric gate dielectric

Albrecht, G.; Heuser, Steffen; Keil, C.; Schlettwein, Derck

doi:10.1016/j.mssp.2015.07.057

Cited by 12 publications

(8 citation statements)

References 27 publications

(33 reference statements)

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“…Organic semiconductor materials have the advantages of simple synthesis, low cost, large‐scale, and low‐temperature fabrication process, showing the great potentials for next‐generation flexible electronic and photoelectronic devices . Chen and co‐workers demonstrated a photodetector based on CH 3 NH 3 PbI 3 and conjugated polymer (PDPP3T), of which the lifetime and stability were obviously improved owing to the protection of organic layer, while the performance parameters did not show obvious improvement, probably resulting from the low mobility of PDPP3T .…”

Section: Introductionmentioning

confidence: 99%

High‐Performance Broadband Perovskite Photodetectors Based on CH₃NH₃PbI₃/C8BTBT Heterojunction

Tong

Sun

Wang

et al. 2017

Adv Elect Materials

108

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Br, I) have attracted much attention due to their superior photoelectric properties, for example, direct band gap (≈1.6 eV), small exciton binding energy (≈20 meV), broad absorption range, long-range exciton diffusion length (100-1000 nm). [7][8][9] Thus they play as important candidates in the field of renewable photovoltaic or photoelectric devices. [10][11][12][13] Perovskite materials were introduced into solar cells in 2009 with the power conversion efficiencies (PCEs) of about 3.81%, and the PCEs of state-ofthe-art perovskite solar cells have been over 20.0%. [14][15][16][17] Furthermore, perovskitebased photodetectors are being quickly developed as well. [18][19][20] The interface engineering using suitable interface materials is a powerful approach to improve the performance of perovskite photodetectors. [21][22][23][24][25] The graphene/perovskite hybrid photodetectors produced high performance with a responsivity up to 180 A W −1 , [23] and a monolayer graphene covered with a thin layer of dispersive perovskite islands resulted in an ultrahigh responsivity photodetector (≈6.0 × 10 5 A W −1 ). [26] However, the ratio of photocurrent and dark current (I light /I dark ) of these perovskite-based photodetector is very small, which is normally lower than 10. Very recently, it was reported that the CH 3 NH 3 PbI 3 /WS 2 heterostructure photodetectors could produce an I light /I dark of ≈10 5 and a responsivity of ≈17 A W −1 . [25] Organic semiconductor materials have the advantages of simple synthesis, low cost, large-scale, and low-temperature fabrication process, showing the great potentials for next-generation flexible electronic and photoelectronic devices. [27][28][29][30] Chen and co-workers demonstrated a photodetector based on CH 3 NH 3 PbI 3 and conjugated polymer (PDPP3T), of which the lifetime and stability were obviously improved owing to the protection of organic layer, while the performance parameters did not show obvious improvement, probably resulting from the low mobility of PDPP3T. [31] Dioctylbenzothieno [2,3-b] benzothiophene (C8BTBT) is an excellent organic semiconductor material with good air stability and ultrahigh hole carrier mobility. [32,33] Herein, we demonstrate that a CH 3 NH 3 PbI 3 / C8BTBT heterojunction produced by solution-processable method could be effectively used to fabricate high-performancePerovskite photodetectors are fabricated via structuring a perovskite/organic heterojunction with CH 3 NH 3 PbI 3 and a high-mobility and stable organic semiconductor dioctylbenzothieno [2,3-b] benzothiophene (C8BTBT), which possess broad range photoresponse from ultraviolet to near-infrared, fast response, and excellent stability. The CH 3 NH 3 PbI 3 /C8BTBT heterojunction photodetectors exhibit an excellent ratio of photocurrent to dark current, I light /I dark , as high as 2.4 × 10 4 , a high responsivity up to 24.8 AW −1 , and a fast response of about 4.0 ms. Meanwhile, the photodetectors can maintain 90% performance even exposed in ambient condition without encapsulation for 20 ...

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Section: Introductionmentioning

confidence: 99%

High‐Performance Broadband Perovskite Photodetectors Based on CH₃NH₃PbI₃/C8BTBT Heterojunction

Tong

Sun

Wang

et al. 2017

Adv Elect Materials

108

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“…Several methods have been used to improve the conductivity of PEDOT: PSS, for example, doping and compounding with carbon-based material or protonic acid. These approaches greatly promote the application of PEDOT in the fields of light-emitting diode, organic solar cell, organic thin film transistor and supercapacitor [ 73 , 74 , 75 , 76 , 77 , 78 ]. Naficy and co-workers prepared PPEGMA1100/PAA conductive DN hydrogel with different mechanical property, pH response property, electrical conductivity property, and swelling property by adjusting the polymerization steps of the PEDTO: PSS [ 79 ].…”

Section: Conducting Polymersmentioning

confidence: 99%

A Review of Conductive Hydrogel Used in Flexible Strain Sensor

et al. 2020

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Hydrogels, as classic soft materials, are important materials for tissue engineering and biosensing with unique properties, such as good biocompatibility, high stretchability, strong adhesion, excellent self-healing, and self-recovery. Conductive hydrogels possess the additional property of conductivity, which endows them with advanced applications in actuating devices, biomedicine, and sensing. In this review, we provide an overview of the recent development of conductive hydrogels in the field of strain sensors, with particular focus on the types of conductive fillers, including ionic conductors, conducting nanomaterials, and conductive polymers. The synthetic methods of such conductive hydrogel materials and their physical and chemical properties are highlighted. At last, challenges and future perspectives of conductive hydrogels applied in flexible strain sensors are discussed.

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“…Nowadays, organic field-effect transistors (OFETs) attract a lot of attention because of their applications in electronic devices such as flexible display panels and transparent circuits (Albrecht, Heuser, Keil, & Schlettwein, 2015;Alpaslan Kösemen, Kösemen, Öztürk, Canımkurbey, & Yerli, 2017;H. Dong, Fu, Liu, Wang, & Hu, 2013;Liu, Zhang, et al, 2015;Padma, Sawant, & Sen, 2015;C.…”

Section: Introductionmentioning

confidence: 99%

“…Nowadays, organic field‐effect transistors (OFETs) attract a lot of attention because of their applications in electronic devices such as flexible display panels and transparent circuits (Albrecht, Heuser, Keil, & Schlettwein, 2015; Alpaslan Kösemen, Kösemen, Öztürk, Canımkurbey, & Yerli, 2017; H. Dong, Fu, Liu, Wang, & Hu, 2013; Liu, Dong, et al, 2015; Liu, Zhang, et al, 2015; Padma, Sawant, & Sen, 2015; C. Wang, Dong, Hu, Liu, & Zhu, 2012). The estimation of active material with small molecules in OFETs by their field‐effect mobilities results in superior performance and optimized mobility of single‐crystal OFETs with the absence of grain boundaries and molecular disorders (Fraboni, Fraleoni‐Morgera, Geerts, Morpurgo, & Podzorov, 2016; Hasegawa & Takeya, 2008).…”

Section: Introductionmentioning

confidence: 99%

The evaluation of surface topography changes in nanoscaled 2,6‐diphenyl anthracene thin films by atomic force microscopy

Ţălu

Solaymani

Rezaee

et al. 2020

Microscopy Res & Technique

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The physical properties of electronic devices made by 2,6-diphenyl anthracene (DPA) are influenced by the microtexture of DPA surfaces. This work focused on the experimental investigation of the 3-D surface microtexture of DPA thin films deposited on OTS (octadecyltrichlorosilane), HMDS (Hexamethyldisilasane), OTMS (octadecyltrimethoxysilane), and Si/SiO 2 (300 nm SiO 2 thickness) substrates with 5 and 50 nm thicknesses and 5 and 10 μm scan size. The thin film surfaces were recorded using atomic force microscopy (AFM) and their images were stereometrically analyzed to obtain statistical parameters, in accordance with ASME B46.1-2009 and ISO 25178-2: 2012. The results showed the effect of different manufacturing parameters on microtexture values where the granular structure is confirmed in all films. In addition, root mean square is increased by increasing the thickness from 5 to 50 nm for all types of substrates.

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Strategy for preparation of transparent organic thin film transistors with PEDOT:PSS electrodes and a polymeric gate dielectric

Cited by 12 publications

References 27 publications

High‐Performance Broadband Perovskite Photodetectors Based on CH₃NH₃PbI₃/C8BTBT Heterojunction

High‐Performance Broadband Perovskite Photodetectors Based on CH₃NH₃PbI₃/C8BTBT Heterojunction

A Review of Conductive Hydrogel Used in Flexible Strain Sensor

The evaluation of surface topography changes in nanoscaled 2,6‐diphenyl anthracene thin films by atomic force microscopy

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Strategy for preparation of transparent organic thin film transistors with PEDOT:PSS electrodes and a polymeric gate dielectric

Cited by 12 publications

References 27 publications

High‐Performance Broadband Perovskite Photodetectors Based on CH3NH3PbI3/C8BTBT Heterojunction

High‐Performance Broadband Perovskite Photodetectors Based on CH3NH3PbI3/C8BTBT Heterojunction

A Review of Conductive Hydrogel Used in Flexible Strain Sensor

The evaluation of surface topography changes in nanoscaled 2,6‐diphenyl anthracene thin films by atomic force microscopy

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High‐Performance Broadband Perovskite Photodetectors Based on CH₃NH₃PbI₃/C8BTBT Heterojunction

High‐Performance Broadband Perovskite Photodetectors Based on CH₃NH₃PbI₃/C8BTBT Heterojunction