Development of short pulse and high power CO 2 laser for EUV lithography

Endo, Akira; Hoshino, Hideo; Ariga, Tatsuya; Miura, Taisuke

doi:10.1117/12.616342

Cited by 5 publications

(1 citation statement)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This led to studies on liquid and gas targets [28][29][30]. Currently, the two primary EUV emitter materials are xenon and tin.…”

Section: Euv Sourcementioning

confidence: 99%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

View full text Add to dashboard Cite

In this paper, next-generation lithography (NGL) for the 22 and 16 nm technology nodes and beyond is reviewed. A broad range of topics, including history, technologies, critical challenges, and the most plausible candidates are discussed. The 22 and 16 nm technology nodes rely on NGL. NGLs have been extensively studied. Because of technological issues, the semiconductor industry has stopped pursuing several NGLs, such as X-ray proximity lithography, ion projection lithography, and scattering with angular limitation projection electron lithography. Currently, the primary candidate technologies are extreme ultraviolet lithography (EUVL), maskless lithography (ML2), and nanoimprint lithography (NIL), with EUVL being the leading candidate. Since EUVL was first proposed in 1988, many studies have been conducted. Currently, there is no "show stopper" for EUVL. Moreover, challenges are present in almost all aspects of EUVL technology. Almost all primary semiconductor manufacturing companies plan to implement commercial pre-production step-and-scan exposure tools in 2011. However, EUVL power at an intermediate focusing level has not yet met the volume manufacturing requirements. EUVL resists have been significantly improved recently, but there is still a critical need to meet requirements on resolution, line width roughness, and sensitivity. Creating a defect-free EUVL mask is another obstacle to the application of EUVL. ML2 and NIL, like EUVL, have also undergone significant progress recently, but throughput, defect control, and cost remain the critical impediments for practical application.

show abstract

“…This led to studies on liquid and gas targets [28][29][30]. Currently, the two primary EUV emitter materials are xenon and tin.…”

Section: Euv Sourcementioning

confidence: 99%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

View full text Add to dashboard Cite

show abstract

Extreme ultraviolet lithography: A review

Wu¹,

Kumar²

2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

345

177

View full text Add to dashboard Cite

Extreme ultraviolet lithography (EUVL) was thoroughly reviewed over a broad range of topics, including history, tools, source, metrology, condenser and projection optics, resists, and masks. Since 1988, many studies on EUVL have been conducted in North America, Europe, and Japan, through state sponsored programs and industrial consortiums. To date, no “show stopper” has been identified, but challenges are present in almost all aspects of EUVL technology. Commercial alpha lithography step-and-scan tools are installed with full-field capability; however, EUVL power at intermediate focus (IF) has not yet met volume manufacturing requirements. Compared with the target of 180W IF power, current tools can supply only approximately 55–62W. EUV IF power has been improved gradually from xenon- to tin-discharge-produced plasma or laser-produced plasma. EUVL resist has improved significantly in the last few years, with 25nm 1:1 line/space resolution being produced with approximately 2.7nm (3σ) line edge roughness. Actual adoption of EUVL will depend on the extension of current optical lithography, such as 193nm immersion lithography, combined with double patterning techniques. Mask fabrication and application technologies may be the most substantial challenges. Creating a defect-free EUVL mask is currently an obstacle to its application, although a combination of removable pellicle and thermophoretic protection may overcome nonpellicle challenge. Cost of ownership is a critical consideration for EUVL; nevertheless, it has been predicted that EUVL may be in pilot production at 32nm and in large-scale production at 22nm with the capability to extend to the next technology node.

show abstract