Development of RD50-MPW2: a high-speed monolithic HV-CMOS prototype chip within the CERN-RD50 collaboration

Zhang, Chenfan; Casse, G.; Massari, N.; Figueras, E. Vilella; Vossebeld, J. H.

doi:10.22323/1.370.0045

Cited by 9 publications

(11 citation statements)

References 5 publications

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“…The RD50-MPW2 [6] has a size of 3.211 mm by 2.120 mm and it was manufactured using resistivity substrates of 10 Ω•cm , 0.5-1.1 kΩ•cm, 1.9 kΩ•cm and > 2 kΩ•cm. Eighty samples of each resistivity were manufactured.…”

Section: Rd50-mpw2 Main Characteristicsmentioning

confidence: 99%

Latest Depleted CMOS Sensor Developments in the CERN RD50 Collaboration

Hernández

2021

Proceedings of the 29th International Workshop on Vertex Detectors (VERTEX2020)

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This contribution summarizes the most recent activities carried out within the CERN RD50 collaboration with regard to Depleted Monolithic Active Pixel Sensors (DMAPS). In particular, these activities have been focused on the characterization of the RD50-MPW2 prototype. RD50-MPW2 is the second DMAPS prototype developed in the 150 nm HV-CMOS technology process from LFoundry. The main characteristics of the RD50-MPW2 design will be reviewed. The leakage current, breakdown voltage and Edge Transient Current Technique (E-TCT) measurements of the RD50-MPW2 test structures will be presented. The characterization of the RD50-MPW2 active matrix and its readout electronics will be also described. Finally, the initial characteristics of the new RD50-MPW3 DMAP sensor prototype being designed at present by the CERN-RD50 collaboration will be shown.

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Section: Rd50-mpw2 Main Characteristicsmentioning

confidence: 99%

Latest Depleted CMOS Sensor Developments in the CERN RD50 Collaboration

Hernández

2021

Proceedings of the 29th International Workshop on Vertex Detectors (VERTEX2020)

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“…1 shows the simulated pulse shapes of a switched-reset pixel flavor, which discharges the preamplifier almost instantly leading to a pulse width independent from deposited charge which allows evaluating the DAQ. Details about analog pixel design and pixel flavors can be found in [3]. For measuring the pulse width in test beams, the digital signal after the comparator in the pixel is captured with an ADC on the readout PCB.…”

Section: Analog Behavior Of the Chipmentioning

confidence: 99%

“…All of them are fabricated in the 150 nm HV-CMOS process by LFoundry S.r.l. 3 and target a use in harsh radiation environments with high spatial granularity. The first part of the paper shows relevant results of RD50-MPW2 which will be repeated with its successor, RD50-MPW3.…”

Section: Introductionmentioning

confidence: 99%

Design and characterization of depleted monolithic active pixel sensors within the RD50 collaboration

Sieberer¹,

Irmler²,

Steininger³

et al. 2022

Nuclear Instruments and Methods in Physics Research Section A:

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“…High-granularity pixels with complex readout electronics are implemented in our HV-CMOS sensors (50 × 50 μm 2 inRD50 − MPW1and60 × 60 μm 2 in RD50-MPW2). Two pixel flavours (continuous-reset and switched-reset) with fast analog front-ends are designed and included in RD50-MPW2, which process an input signal of 35 ke − within 480 ns and 52 ns, respectively [4].…”

Section: Pixel Granularity and In-pixel Readout Circuitsmentioning

confidence: 99%

High-performance HV-CMOS sensors for future particle physics experiments — an overview

Zhang¹,

Casse²,

Franks³

et al. 2022

J. Inst.

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HV-CMOS (High Voltage-CMOS) sensors are emerging as a prime candidate for future tracking detectors that have extreme requirements on material budget, pixel granularity, time resolution and radiation tolerance. These sensors have the advantages of full monolithic structure, low manufacture cost, fast charge collection and high radiation tolerance. Confirmed and potential tracking applications in physics experiments include the Mu3e experiment, proton EDM searches, future upgrades of LHC (Large Hadron Collider) and CEPC (Circular Electron Positron Collider). The HV-CMOS group at Liverpool is doing generic R&D to push the boundaries of HV-CMOS sensors performance, especially in terms of single point resolution, fast-timing capability and radiation tolerance. This contribution gives an overview of the latest research by the Liverpool HV-CMOS group and presents the HV-CMOS prototypes developed in Liverpool.

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Development of RD50-MPW2: a high-speed monolithic HV-CMOS prototype chip within the CERN-RD50 collaboration

Cited by 9 publications

References 5 publications

Latest Depleted CMOS Sensor Developments in the CERN RD50 Collaboration

Latest Depleted CMOS Sensor Developments in the CERN RD50 Collaboration

Design and characterization of depleted monolithic active pixel sensors within the RD50 collaboration

High-performance HV-CMOS sensors for future particle physics experiments — an overview

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