Development of oxygen transport model in Czochralski growth of silicon crystals

Smirnov, Andrey; Kalaev, V.V.

doi:10.1016/j.jcrysgro.2008.03.002

Cited by 70 publications

(41 citation statements)

References 8 publications

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“…It is clear that CO g is a resultant of the reaction, which is proportional to the SiO g concentration. The basic order of C m concentration is about 10 18 atom/cm 3 , which is the same as the experimental result reported by Ganesh et al [19]. The concentration of C m in the melt is large at the top of the melt and small at the bottom of the melt.…”

Section: Distributions Of Carbon and Oxygensupporting

confidence: 89%

“…2 and 3, respectively. The average amount of SiO g concentration in the gas phase is 10 -9 mol/cm 3 and the maximum concentration is about 10 -8 mol/cm 3 , which are almost the same as the simulation results of Smirnov and Kalaev [10] in a Czochralski furnace. The average amount of oxygen atom concentration in the melt is 10 17 atom/cm 3 , which is consistent with the experimental result reported by Matsuo et al [18].…”

Section: Distributions Of Carbon and Oxygensupporting

confidence: 85%

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Numerical analysis of light elements transport in a unidirectional solidification furnace

Kakimoto

Gao

Nakano

2011

Phys. Status Solidi (c)

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Section: Distributions Of Carbon and Oxygensupporting

confidence: 89%

Section: Distributions Of Carbon and Oxygensupporting

confidence: 85%

Numerical analysis of light elements transport in a unidirectional solidification furnace

Kakimoto

Gao

Nakano

2011

Phys. Status Solidi (c)

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“…[11][12][13][14][15][16][17][18][19][20][21][22] Some of these previous investigations included only local simulations [11][12][13][14][15][16][17] that neglected the mass transport of the impurities in the gas phase. In other cases, the reported simulations included results of global simulations, [18][19][20][21] some of which only neglected mass transport of oxygen and carbon in the melt, 18) whereas others neglected carbon transfer for both the gas and the silicon melt. [19][20][21] The literature contains no reports of simulations that account for both the oxygen and carbon impurities in both the gas and the silicon melt.…”

Section: )mentioning

confidence: 99%

Silicon bulk growth for solar cells: Science and technology

Kakimoto

Gao

Nakano

et al. 2017

Jpn. J. Appl. Phys.

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The photovoltaic industry is in a phase of rapid expansion, growing by more than 30% per annum over the last few decades. Almost all commercial solar cells presently use single-crystalline or multicrystalline silicon wafers similar to those used in microelectronics; meanwhile, thin-film compounds and alloy solar cells are currently under development. The laboratory performance of these cells, at 26% solar energy conversion efficiency, is now approaching thermodynamic limits, with the challenge being to incorporate these improvements into low-cost commercial products. Improvements in the optical design of cells, particularly in their ability to trap weakly absorbed light, have also led to increasing interest in thin-film cells based on polycrystalline silicon; these cells have advantages over other thin-film photovoltaic candidates. This paper provides an overview of silicon-based solar cell research, especially the development of silicon wafers for solar cells, from the viewpoint of growing both singlecrystalline and multicrystalline wafers.

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“…Atomic oxygen being dissolved in the melt either incorporates into the growing crystal, or evaporates from the melt free surface as vapor SiO [3]. Evaporated SiO is transported by argon flow, forced through the furnace.…”

Section: Article In Pressmentioning

confidence: 99%

“…Detailed analysis of chemical processes and reactions, accompanying silicon growth process is required for creation of a sophisticated numerical model. On the basis of the previous work [1,2] we have published a model of oxygen transport in the melt and SiO transport in argon without account of silicon monoxide deposition and reactions on the surfaces of the furnace elements [3]. In the current paper we present an extended model, which accounts for SiO deposition on cold walls of the furnace.…”

Section: Introductionmentioning

confidence: 99%