Analysis of impurity transport and deposition processes on the furnace elements during Cz silicon growth

Smirnov, Andrey; Kalaev, V.V.

doi:10.1016/j.jcrysgro.2008.09.127

Cited by 26 publications

(22 citation statements)

References 5 publications

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“…[11][12][13][14][15][16][17][18][19][20][21][22] Some of these previous investigations included only local simulations [11][12][13][14][15][16][17] that neglected the mass transport of the impurities in the gas phase. In other cases, the reported simulations included results of global simulations, [18][19][20][21] some of which only neglected mass transport of oxygen and carbon in the melt, 18) whereas others neglected carbon transfer for both the gas and the silicon melt. [19][20][21] The literature contains no reports of simulations that account for both the oxygen and carbon impurities in both the gas and the silicon melt.…”

Section: )mentioning

confidence: 99%

“…In other cases, the reported simulations included results of global simulations, [18][19][20][21] some of which only neglected mass transport of oxygen and carbon in the melt, 18) whereas others neglected carbon transfer for both the gas and the silicon melt. [19][20][21] The literature contains no reports of simulations that account for both the oxygen and carbon impurities in both the gas and the silicon melt.…”

Section: )mentioning

confidence: 99%

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Silicon bulk growth for solar cells: Science and technology

Kakimoto

Gao

Nakano

et al. 2017

Jpn. J. Appl. Phys.

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The photovoltaic industry is in a phase of rapid expansion, growing by more than 30% per annum over the last few decades. Almost all commercial solar cells presently use single-crystalline or multicrystalline silicon wafers similar to those used in microelectronics; meanwhile, thin-film compounds and alloy solar cells are currently under development. The laboratory performance of these cells, at 26% solar energy conversion efficiency, is now approaching thermodynamic limits, with the challenge being to incorporate these improvements into low-cost commercial products. Improvements in the optical design of cells, particularly in their ability to trap weakly absorbed light, have also led to increasing interest in thin-film cells based on polycrystalline silicon; these cells have advantages over other thin-film photovoltaic candidates. This paper provides an overview of silicon-based solar cell research, especially the development of silicon wafers for solar cells, from the viewpoint of growing both singlecrystalline and multicrystalline wafers.

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Section: )mentioning

confidence: 99%

Section: )mentioning

confidence: 99%

Silicon bulk growth for solar cells: Science and technology

Kakimoto

Gao

Nakano

et al. 2017

Jpn. J. Appl. Phys.

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“…in which K SiC = exp (9610/T − 3) [9], and where K SiC is the reaction equilibrium constant, A V is the specific surface area (by volume), and…”

Section: Simplified Model For the Generation Of Sicmentioning

confidence: 99%

“…Therefore, the dynamics of C contamination and the generation of SiC during the melting process need to be understood for controlling impurities in CZ-Si crystal growth. Most numerical studies [8][9][10] for C contamination in CZ-Si process have focused the analysis on the steady state of the diameter growth stage, using the quasi-steadystate assumption. Liu et al [11] recently addressed the generation and accumulation of C during the melting process in a CZ-Si furnace.…”

Section: Introductionmentioning

confidence: 99%

Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth

Liu

Gao

Nakano

et al. 2015

Crystal Research and Technology

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Carbon contamination in single crystalline silicon is detrimental to the minority carrier lifetime, one of the critical parameters for electronic wafers. In order to study the generation and accumulation of carbon contamination, transient global modeling of heat and mass transport was performed for the melting process of the Czochralski silicon crystal growth. Carbon contamination, caused by the presence of carbon monoxide in argon gas and silicon carbide in the silicon feedstock, was predicted by the fully coupled chemical model; the model included six reactions taking place in the chamber. A simplified model for silicon carbide generation by the reaction between carbon monoxide and solid silicon was proposed using the closest packing assumption for the blocky silicon feedstock. The accumulation of carbon in the melted silicon feedstock during the melting and stabilization stages was predicted. Owing to this initial carbon content in the melt, controlling carbon contamination before the growth stage becomes crucial for reducing the carbon incorporation in a growing crystal.

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“…There have been a few studies using global simulations [8][9][10][11], however, they neglected the calculation of mass transfer of both the oxygen and carbon impurities in the silicon melt and gas phase. Almost all of the global simulations about impurities [8][9][10][11] were based on the Czochralski method; there has been no simulation based on the unidirectional solidification method for solar cells. Therefore, a global simulation in a unidirectional solidification furnace that considers all of the processes in crystal growth is needed.…”

Section: Introductionmentioning

confidence: 99%