Development of new chrome blanks for 65-nm node and beyond

Hashimoto, Masahiro; Yamada, Takeyuki; Sakamoto, M.; Hara, Mutsumi; Ohkubo, Yasushi; Ushida, Masao

doi:10.1117/12.580776

Cited by 4 publications

(2 citation statements)

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“…Overlay error was measured between resist image and Cr image to extract Cr film stress effect. Comparison results between TF blank, which was developed by HOYA Corporation to reduce the Cr film stress 6) , and reference blank (NTAR7) are shown in Figure 5. The error induced by Cr film stress is reduced from 5 nm to 1 nm or even lower using TF blank, essential to meet image-placement requirement for double patterning.…”

Section: Image-placement Accuracymentioning

confidence: 99%

Key improvement schemes of accuracies in EB mask writing for double patterning lithography

Sunaoshi¹,

Kamikubo²,

Nishimura³

et al. 2008

SPIE Proceedings

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Double pattering or exposure methodologies are being adopted to extend 193nm optical lithography. These methodologies require much tighter image-placement accuracy and Critical Dimension (CD) controls on mask than the conventional single exposure technique. Our experiments indicate that the global image placement drift induced by the time elapsed in mask writing is the dominant factor that degrades image-placement accuracy. In-situ grid measurement method is being proposed to suppress this time dependent drift. Resist charging effect is also an important error factor. While it can be reduced by charge dissipation layer (CDL), further feasibility study is required for using CDL to overcome certain side-effects pertaining to CDL. High dose resist improves local CD uniformity and pattern fidelity. However, mask writing time becomes longer with lower sensitivity. To satisfy conflicting issues, throughput and CD uniformity, high sensitivity CAR which has short acid diffusion length is desirable. Shortening acid diffusion length is essential for achieving good pattern resolution as well as good CD uniformity. This paper will address the results of error source analyses and key schemes of accuracy improvements in photo-mask manufacturing using NuFlare Technology's EB mask writers.

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Section: Image-placement Accuracymentioning

confidence: 99%

Key improvement schemes of accuracies in EB mask writing for double patterning lithography

Sunaoshi¹,

Kamikubo²,

Nishimura³

et al. 2008

SPIE Proceedings

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“…3 used. 5 Similar types of light shield border structures are incorporated into EUVL mask to improve its performance. Fig.…”

Section: Introductionmentioning

confidence: 99%

EUVL practical mask structure with light shield area for 32nm half pitch and beyond

Kamo¹,

Aoyama²,

Tanaka³

et al. 2008

Photomask Technology 2008

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The effect of mask structure with light shield area on the printability in EUV lithography was studied. When very thin absorber on EUVL mask is used for ULSI application, it then becomes necessary to create EUV light shield area on the mask in order to suppress possible leakage of EUV light from neighboring exposure shots. We proposed and fabricated two types of masks with very thin absorber and light shield area structure. For both types of masks we demonstrated high shield performances at light shield areas by employing a Small Field Exposure Tool (SFET).

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Resist charging effect in photomask: Its impact on pattern placement error and critical dimension

Choi

Nam

Kim

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Wafer level critical dimension control in spacer-defined double patterning for sub-72 nm pitch logic technologya)By the development of the double exposure technique or the double patterning technique, the pattern placement error of a photomask is interesting because of its impact on the size and position of wafer pattern. Among various sources to induce the pattern placement error, we have focused on the charging effect of the FEP-171 resist and have shown that the resist charging effect generates the pattern position error of a clear pattern and the critical dimension variation of a dark pattern. Based on experiment and simulation, we present quantitatively the dependence of position error on pattern density, pattern shape, and writing order. Furthermore, we have discussed the model to describe the charging effect and its agreement with experiment and the correction method to remove the resist charging effect.

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Development of new chrome blanks for 65-nm node and beyond

Cited by 4 publications

References 0 publications

Key improvement schemes of accuracies in EB mask writing for double patterning lithography

Key improvement schemes of accuracies in EB mask writing for double patterning lithography

EUVL practical mask structure with light shield area for 32nm half pitch and beyond

Resist charging effect in photomask: Its impact on pattern placement error and critical dimension

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