Development of MBE-grown HgCdTe 64 x 64 FPA for long-wavelength IR detection

Kanno, Toshio; Saga, Minoru; Kawahara, Akihiro; Oikawa, Ryuichi; Ajisawa, A.; Tomioka, Yoshitada; Oda, Naoki; Yamagata, T.; Murashima, S.; Shima, Tsuyosi; Yasuda, Noboru

doi:10.1117/12.160578

Cited by 8 publications

(1 citation statement)

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“…In the applications of long wavelength infrared (LWIR) detection, a large integration capacitor is needed because of the large amount of both background photons and dark currents in the photodiode. Thus, a large common off-focal-plane integration capacitor is used in the readout circuit to meet the requirement while minimizing the chip area [11], [12]. In performing the signal integration, the conventional multiplexed electronically scanned array (MESA) [11] is used to select the detector directly through MOS switches and the direct injection gate (DIG).…”

Section: Introductionmentioning

confidence: 99%

A new cryogenic CMOS readout structure for infrared focal plane array

Hsieh

Sun

1997

IEEE J. Solid-State Circuits

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A new current readout structure for the infrared (IR) focal-plane-array (FPA), called the switch-current integration (SCI) structure, is presented in this paper. By applying the share-buffered direct-injection (SBDI) biasing technique and off focal-plane-array (off-FPA) integration capacitor structure, a high-performance readout interface circuit for the IR FPA is realized with a pixel size of 50 2 50 m 2. Moreover, the correlated double sampling (CDS) stage and dynamic discharging output stage are utilized to improve noise and speed performance of the readout structure under low power dissipation. An experimental SCI readout chip has been designed and fabricated in 0.8-m double-poly-double-metal (DPDM) n-well CMOS technology. The measurement results of the fabricated readout chip at 77 K with 4 and 8 V supply voltages have successfully verified both the readout function and the performance improvement. The fabricated chip has a maximum charge capacity of 1.12 2 10 8 electrons, a maximum transimpedance of 1 2 10 9 , and ae active power dissipation of 30 mW. The proposed CMOS SCI structure can be applied to various cryogenic IR FPA's.

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Section: Introductionmentioning

confidence: 99%