Development of Materials and Processes for Double Patterning toward 32nm Node ArF Immersion Lithography

Tarutani, Shinji; Tsubaki, Hideaki; Kanna, Shinichi

doi:10.2494/photopolymer.21.685

Cited by 28 publications

(13 citation statements)

References 2 publications

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“…In double development, a hybrid resist (which is essentially a mixture of a positive-tone resist and a negative-tone resist) that exhibits two solubility transitions at the optimal exposure dose is used (119)(120)(121). As the initially insoluble hybrid resist is exposed, it reaches a threshold dose at which it becomes soluble in TMAH developer (a positive-tone characteristic).…”

Section: Figure 17mentioning

confidence: 99%

Immersion Lithography: Photomask and Wafer-Level Materials

French

Tran

2009

Annu. Rev. Mater. Res.

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Optical immersion lithography utilizes liquids with refractive indices >1 (the index of air) below the last lens element to enhance numerical aperture and resolution, enabling sub-40-nm feature patterning. This shift from conventional dry optical lithography introduces numerous challenges requiring innovations in materials at all imaging stack levels. In this article, we highlight the recent materials advances in photomasks, immersion fluids, topcoats, and photoresists. Some of the challenges encountered include the fluids' and photomask materials' UV durability, the high-index liquids' compatibility with topcoats and photoresists, and overall immersion imaging and defectivity performance. In addition, we include a section on novel materials and methods for double-patterning lithography-a technique that may further extend immersion technology by effectively doubling a less dense pattern's line density. 93 Annu. Rev. Mater. Res. 2009.39:93-126. Downloaded from www.annualreviews.org by Otterbein University on 09/17/13. For personal use only.

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Section: Figure 17mentioning

confidence: 99%

Immersion Lithography: Photomask and Wafer-Level Materials

French

Tran

2009

Annu. Rev. Mater. Res.

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“…But the major problem of SAQP is high cost due to its process complexity derive from multiple etch steps. For more cost-effective double patterning, several techniques which only use clean track tool were proposed [1][2][3][4][5][6]. One of the representative of these techniques is known as dual-tone development (DTD).…”

Section: Introductionmentioning

confidence: 99%

Development of Materials-based Pitch Split Process

Hori

Watanabe

Tsunoda

et al. 2016

J. Photopol. Sci. Technol.

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There are several options for sub-10nm fabrication such as extreme ultra violet (EUV) lithography, directed self-assembly (DSA), and ArF multiple patterning. For further extension of ArF lithography, one of the key challenges is cost effectiveness. In this paper, a new double patterning method -pattern split process (PSP), which is based on dual tone development is demonstrated. Different from conventional DTD, additional acid and base materials were used in this process to gain high deprotection contrast. By PSP, double pitch frequency pattern which has improved roughness was successfully obtained. Also other basic parameter such as focus margin, wafer uniformity and resolution are reported.

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“…Double patterning and multiple patterning lithography [1] have provided an extension of 193nm immersion lithography beyond 32nm-node for the semiconductor industry. Compared with single patterning, double patterning brings a higher process integration complexity and requires a tighter control of overlay and critical dimension uniformity (CDU).…”

Section: Introductionmentioning

confidence: 99%

Reduction of Critical Dimension Difference in Litho-Etch-Litho- Etch Double Patterning Process

Tang¹,

Shearer²,

Cheong³

et al. 2015

J. Photopol. Sci. Technol.

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The successful implementation of double patterning lithography in semiconductor manufacturing is dependent on the progress of several key items, including good control of critical dimension (CD) uniformity and overlay. Here we report a pass-to-pass post-etch CD (ECD) difference in Litho-Etch-Litho-Etch (LELE) process. The CD difference mainly came from the organic planarization layer (OPL) thickness delta between 1 st pass Litho-Etch (LE) process and 2 nd pass LE process. The pass-to-pass CD difference can be reduced by adjusting the OPL thickness.

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Development of Materials and Processes for Double Patterning toward 32nm Node ArF Immersion Lithography

Cited by 28 publications

References 2 publications

Immersion Lithography: Photomask and Wafer-Level Materials

Immersion Lithography: Photomask and Wafer-Level Materials

Development of Materials-based Pitch Split Process

Reduction of Critical Dimension Difference in Litho-Etch-Litho- Etch Double Patterning Process

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