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2014
DOI: 10.1016/j.vacuum.2014.06.029
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Development of low-pressure high-frequency plasma chemical vapor deposition method on surface modification of silicon wafer

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Cited by 2 publications
(2 citation statements)
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“…The hydrophilicity of the PEN surface for 15 d after the treatment was evaluated using the θ=2 method by dropping 1.0 µL droplets of pure water onto the surface and measuring the contact angle using a contact angle meter (Kyowa Interface Science type CA-D). 18) XPS (Shimadzu=KRATOS AXIS-HS) measurements were repeated five times using a Mg Kα (1253.6 eV) X-ray source 1, 2, 8, and 14 d after the treatment was applied to analyze C 1s and O 1s elements.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…The hydrophilicity of the PEN surface for 15 d after the treatment was evaluated using the θ=2 method by dropping 1.0 µL droplets of pure water onto the surface and measuring the contact angle using a contact angle meter (Kyowa Interface Science type CA-D). 18) XPS (Shimadzu=KRATOS AXIS-HS) measurements were repeated five times using a Mg Kα (1253.6 eV) X-ray source 1, 2, 8, and 14 d after the treatment was applied to analyze C 1s and O 1s elements.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…Consequently, substrate can be high adhesion between plastic surface and metal film. In addition, plasma chemical vapor deposition (CVD) has good characteristics in terms of uniform film formation, and most of all, is nonthermal plasma deposition (11)(12). Thus, this plasma system is suitable for polymer materials.…”
Section: Introductionmentioning
confidence: 99%