Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9)
DOI: 10.1109/pvsc.1993.346922
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Development of high efficiency thin silicon space solar cells

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Cited by 5 publications
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“…(Color online) Open‐circuit voltage drop compared to bandgap energy ( E g / q ‐ V oc ) and nonradiative V oc ( V oc , n rad ) in Si solar cells as a function of external radiative efficiency (ERE). Circles and squares for E g / q − V oc data show data for Si space cells 1–4 and data 5–9 for advanced cells for terrestrial use, respectively [Colour figure can be viewed at wileyonlinelibrary.com]…”
Section: Analysis For Efficiency Potential Of Crystalline Si Space Somentioning
confidence: 99%
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“…(Color online) Open‐circuit voltage drop compared to bandgap energy ( E g / q ‐ V oc ) and nonradiative V oc ( V oc , n rad ) in Si solar cells as a function of external radiative efficiency (ERE). Circles and squares for E g / q − V oc data show data for Si space cells 1–4 and data 5–9 for advanced cells for terrestrial use, respectively [Colour figure can be viewed at wileyonlinelibrary.com]…”
Section: Analysis For Efficiency Potential Of Crystalline Si Space Somentioning
confidence: 99%
“…Effects of conducting type on radiation‐resistance of Si solar cells are explained by damage constant for minority‐carrier diffusion length as expressed by Equation as shown in Figure 8. Figure 15 shows changes in relative output power of n‐type Si base cells 34 as a function of 1 MeV electron fluence in comparison with those of Si BSFR space solar cells 1–3 and calculated results for changes in relative output power of Si solar cells as a function of damage constant K L for minority‐carrier diffusion length. Damage constant for minority‐carrier diffusion length in n‐type Si estimated from Figure 15 is 1 × 10 −9 and is higher that (5 × 10 −11 ) in p‐type Si.…”
Section: Analysis Of Radiation Degradation Of Advanced Si Solar Cellsmentioning
confidence: 99%
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