is described. By cont possible to vary the angstroms thick that has epitaxially regrown on the silicon. The diffuse interface consists of randomly ds produced by crystallographic out-diffusion of t silicon. The light trapping ability of the diffuse contact is found to be close to the theoretical limit. Both types of contacts are found to have specific contact resistivities of 10" R-cm2. The process g the contacts involves illuminating the devices with tungsten halogen lamps. The process is rapid (under 100 s) and low temperature (peak temperature < 580'C), making it favorable for commercial solar cell fabrication.
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