Articles you may be interested inIn situ measurement of surface stress evolution during sputter deposition of Co Cr X ∕ Cr ( X = Pt , Ta ) thin film and its magnetic properties J. Appl. Phys. 97, 10N116 (2005); 10.1063/1.1854253 Epitaxial growth of highly coercive Sm-Co thin films using pulsed laser deposition High coercivity CoPtCr, CoPt films deposited at high power and high bias conditions for hard bias applications in magnetoresistive heads Cr films and Cr/CoCrPt bilayer films have been grown using ion-beam-assisted pulsed laser deposition ͑PLD͒. High mobility conditions such as a substrate temperature above 350°C, a low deposition rate, and a high laser energy promote the formation of a ͕100͖ bcc crystallographic preferred orientation in the Cr layer, while a ͕110͖-oriented film is formed under other conditions. The ͕100͖ orientation can be formed at lower temperatures if the film is bombarded by energetic Ar ions during growth. CoCrPt grows with the hcp-͕112 0͖ orientation on bcc-Cr ͕100͖ underlayers, which is the same epitaxial relationship that occurs in sputtered Cr/Co-alloy films used in hard disk recording media. PLD CoCrPt films also have magnetic properties broadly similar to those of sputtered films. The PLD film microstructure development is interpreted in terms of the preferential nucleation of ͕100͖-oriented Cr crystals during the early stages of film growth.