2008
DOI: 10.1109/pesc.2008.4591943
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Development of an extreme temperature range silicon carbide power module for aerospace applications

Abstract: A silicon carbide semiconductor power module is developed for operation at wide temperature extremes. The development of a device substrate, die-attach, interconnect system, and module DC interface is presented in this paper. Electrical and mechanical components of the package are tested and chosen for the best combination to work together as a system. This allows the package to withstand thermal cycling and demonstrate reliability through its operating temperature range of -50°C to 250°C.

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Cited by 40 publications
(13 citation statements)
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“…To minimize mechanical fatigue during high thermal cycling, sintered silver can be used as the die attach method in order to take advantage of its ability to absorb the repeated mechanical stresses associated with mismatches in the Coefficient of Thermal Expansion (CTE) between the die and substrate materials [60]. Some other materials (e.g., MoCu and AlSiC) offer a relatively close CTE match with SiC which helps to achieve more reliable die attachment.…”
Section: ) Power Electronics Reliability/robustness Technologiesmentioning
confidence: 99%
“…To minimize mechanical fatigue during high thermal cycling, sintered silver can be used as the die attach method in order to take advantage of its ability to absorb the repeated mechanical stresses associated with mismatches in the Coefficient of Thermal Expansion (CTE) between the die and substrate materials [60]. Some other materials (e.g., MoCu and AlSiC) offer a relatively close CTE match with SiC which helps to achieve more reliable die attachment.…”
Section: ) Power Electronics Reliability/robustness Technologiesmentioning
confidence: 99%
“…This issue was addressed in a 2008 paper from General Electric, in which design choices were explored to ensure operation at 250 • C [24]. Substrates, die, attach materials, interconnects, and encapsulation materials were explored individually.…”
Section: Trends In Wire Bonded Silicon Carbide Packagingmentioning
confidence: 99%
“…The module undergoes high thermal and thermo-mechanical stresses at high temperatures leading to critical failures in the system [135,136]. Degradation of polymeric materials used in the module packaging as well as the creation of intermetallic compounds, which may weaken the joints also occur at high temperatures [124,137,138].…”
Section: Electro Chemical Double Layermentioning
confidence: 99%