Development of AlInGaN based blue–violet lasers on GaN and SiC substrates

Rumbolz, C.; Brüderl, G.; Leber, Andreas; Eichler, Christoph; Furitsch, M.; Avramescu, Adrian; Miler, A.; Lell, A.; Strauß, Uwe; Härle, V.

doi:10.1002/pssa.200565320

Cited by 22 publications

(11 citation statements)

References 11 publications

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“…This tilted angle was adopted to minimize the reflectance from the front facet of the SLD without antireflection coatings (AR) [30], while the back facet is coated with a dielectric high-reflective (HR) mirror with >90% reflectivity in order to increase the output power. Conventional LD fabrication steps were used in a commercial epitaxial structure consisting of a c-plane GaN substrate, AlGaN p-and n-type cladding layers, InGaN active region with multiple quantum wells, p-AlGaN electron blocking layer, highly Mg-doped p-GaN contact layer and GaN waveguides similar to previous reported structures [31].…”

Section: Methodsmentioning

confidence: 99%

High-power blue superluminescent diode for high CRI lighting and high-speed visible light communication

Alatawi¹,

Holguín‐Lerma²,

Kang³

et al. 2018

Opt. Express

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We demonstrated a high-power (474 mW) blue superluminescent diode (SLD) on c-plane GaN-substrate for speckle-free solid-state lighting (SSL), and high-speed visible light communication (VLC) link. The device, emitting at 442 nm, showed a large spectral bandwidth of 6.5 nm at an optical power of 105 mW. By integrating a YAG-phosphor-plate to the SLD, a CRI of 85.1 and CCT of 3392 K were measured, thus suitable for solid-state lighting. The SLD shows a relatively large 3-dB modulation bandwidth of >400 MHz, while a record high data rate of 1.45 Gigabit-per-second (Gbps) link has been achieved below forward-error correction (FEC) limit under non-return-to-zero on-off keying (NRZ-OOK) modulation scheme. Our results suggest that SLD is a promising alternative for simultaneous speckle-free white lighting and Gbps data communication dual functionalities.

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Section: Methodsmentioning

confidence: 99%

High-power blue superluminescent diode for high CRI lighting and high-speed visible light communication

Alatawi¹,

Holguín‐Lerma²,

Kang³

et al. 2018

Opt. Express

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“…Our self aligned process for structuring ridge widths of 1.5 to 2.5 µm is described elsewhere [2]. We want to mention that we see advantages using absorbers on the GaN surface compared to earlier publications using absorbers on the top of the passivation layer [3].…”

Section: Methodsmentioning

confidence: 98%

Beam quality of blue InGaN laser for projection

Strauß

Eichler

Rumbolz

et al. 2008

Phys. Status Solidi (c)

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The blue light sources of choice for laser projection will be long wavelength nitride lasers because of their high wall plug efficiency and their small form factor compared to blue light sources using second harmonic generation. High quality of the far field is required for laser projection. However, optical confinement of GaN/AlGaN structures becomes increasingly difficult when wavelength shifts from 405 nm to the true blue spectrum. We will show excellent far fields by suppression of higher order laser modes and by improved waveguiding, respectively. We present simulations of laser modes as a function of ridge width. The slow axis far field is improved by absorber layers that guarantee in‐plane values of M2 < 1.5. Sufficient vertical confinement of the laser light by thick cladding layers is necessary to suppress laser modes guided within the substrate. We present 440 nm lasers for projection with threshold currents of 20 mA and slope efficiencies more than 0.8 W/A. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The wafers were processed as ridge-wave-guide lasers with structuring the ridge-width of 1.5µm to 2.5µm by a selfaligned process, which is described elsewhere [8]. The ridge is structured by reactive ion etching and the devices are passivated with an insulating material like SiO 2 .…”

Section: Methodsmentioning

confidence: 99%

Temperature dependence of blue InGaN lasers

et al. 2009

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True blue lasers with wavelengths of ~450 nm are of great interest for full color laser projection. These kind of applications usually require high output power and, in particular, an excellent wall plug efficiency within a wide temperature range. In this paper we therefore present experimental and theoretical investigations of the temperature behavior of 60mW InGaN lasers in a range of -10 °C to 100 °C.The laser parameters threshold current density, slope efficiency and operating voltage describe the wall plug efficiency of the device. The slope efficiency does not show any significant temperature dependence which is due to an almost temperature independent injection efficiency in the temperature range that is of interest for most commercial applications. In contrast, the laser threshold current density increases with temperature and we determine a characteristic temperature T 0 of about 141K for our devices emitting at 445nm. This increasing threshold current density can be explained by lower gain of the quantum wells at higher temperature. Furthermore, Auger recombination influences the threshold as verified by simulations. The second electro-optical parameter is the electrical voltage, which is dominated by electrical barriers. The voltage decreases with increasing temperature and compensates the increasing threshold current resulting in a nearly constant high wall plug efficiency of 13% between -10°C and 100°C.

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Development of AlInGaN based blue–violet lasers on GaN and SiC substrates

Cited by 22 publications

References 11 publications

High-power blue superluminescent diode for high CRI lighting and high-speed visible light communication

High-power blue superluminescent diode for high CRI lighting and high-speed visible light communication

Beam quality of blue InGaN laser for projection

Temperature dependence of blue InGaN lasers

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