Development of a super-high-sensitivity image sensor using 640×480 pixel active-matrix high-efficiency electron emission device

Abstract

Articles you may be interested inActive-matrix Spindt-type field emitter array with faster response time for image sensor with high-gain avalanche rushing amorphous photoconductor target J. Vac. Sci. Technol. B 33, 012205 (2015); 10.1116/1.4906103 2 ∕ 3 in. ultrahigh-sensitivity image sensor with active-matrix high-efficiency electron emission device J. Vac. Sci. Technol. B 28, C2D11 (2010); 10.1116/1.3271163 640 × 480 pixel active-matrix Spindt-type field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target J. Vac. Sci. Technol. B 28, 96 (2010); 10.1116/1.3272732Enhanced output current density of an active-matrix high-efficiency electron emission device array with 13.75 μ m pixels An extremely high-sensitivity image sensor has been developed with a combination of an active-matrix high-efficiency electron emission device ͑HEED͒ array and a high-gain avalanche rushing amorphous photoconductor ͑HARP͒ target. Following the description of the requirements for the use of the electron emitter as an image-sensing probe, the characteristics of a fabricated 640ϫ 480 pixel active-matrix HEED image sensor with a HARP target are presented by image-pickup experiments under a dark condition. The emission current density of the experimental HEED under an active-matrix drive was 4 A / cm 2 corresponding to a practical level. A clear image observed in the prototype compact camera demonstrates that the surface-emitting HEED is useful for image sensing based on HARP with high sensitivity and sufficient definition.

Highly Monochromatic Electron Emission from Graphene/Hexagonal Boron Nitride/Si Heterostructure

“…Planar metal-oxide-semiconductor (MOS) electron emission devices − have excellent attributes, such as a low driving voltage, they function at low , and atmospheric pressures , and in liquids, − and have a low divergence angle for the electron beam . Several practical applications have been proposed, including in field emission displays, , in highly sensitive image sensors, − and for electron beam lithography systems. − The electron emission source plays a critical role in the performance of electron microscopy setups, such as scanning electron microscopes (SEM), transmission electron microscopes (TEM), and electron beam lithography. Compared with Schottky-type electron sources and tungsten field emitters, MOS-type electron emission devices are disadvantaged by their broad emitted electron energy spread.…”

Electron emission properties of graphene-oxide-semiconductor planar-type electron emission devices

“…A planar type electron emission device based on a metal-oxide-semiconductor (MOS) structure 1 has great potential for applications utilizing electron beams such as field emission displays, 2 high-sensitive image sensors, 3 field emission lamps, 4,5 and flat-panel x-ray sources 6,7 since it can be operated in low vacuum and low voltage conditions 1 compared to a conventional field emitter array. 8 However, its electron emission efficiency, which is defined as the ratio of emission current from the topmost gate electrode into vacuum divided by the total current flow through the semiconductor substrate, is typically very low of around 0.002%.…”

High-performance planar-type electron source based on a graphene-oxide-semiconductor structure

“…Planar-type electron sources based on a metal-oxide-semiconductor structure (MOS) can be operated at low vacuum, low voltage, and room temperature conditions [14][15][16][17], and 3 emit electron beams with small divergence angles [18]. Although these features are advantageous for the several applications, such as low-cost, high-resolution electron microscopes, highly sensitive image sensors [19], field emission displays [20], and electron beam lithography [21,22], they have a very low electron emission efficiency of 0.002 % [16].…”