A high efficiency electro-emission device (HEED) has been developed with a structure of Pt/SiO x /Si/Al on a thermally-oxidized Si substrate. The thicknesses of the SiO x and Si films were 400 nm and 5 µ m, respectively. Electron emission characteristics of the HEED are reported. It was found that the HEED has an electron-emission efficiency as high as 28% and a high brightness of 80 kcd/m2 using phosphor ZnS:Cu,Al. This high electron-emission efficiency was obtained in a range of applied voltage in which negative resistance occurred.
Articles you may be interested inStudy of high-brightness flat-panel lighting source using carbon-nanotube cathodeIn this article, we describe the improvement in cold emission characteristics of a device termed HEED ͑high efficiency electro-emission device͒ by optimizing the emission site structures. The advanced HEED consists of a bottom electrode, a Si layer, a SiO x layer, a top electrode, and a carbon layer. The electron emission properties were significantly improved by appropriately arranging emission sites of ''dimplelike'' forms with a diameter of 1 m on the device surface. The applied voltage was significantly lowered to 20 V ͑1/5 of that in the previously reported HEED͒, and a high emission current density of 1.8 mA/cm 2 was obtained at a applied voltage of 20 V with an electron emission efficiency of 1% under a pulse operation. The energy distribution measurement of emitted electrons showed that the device emits considerably high-energy electrons as compared with conventional field emitters. Using this emitter as an excitation source, a 4 in. prototype flat display panel has been fabricated with a vacuum spacing of 9 mm between glass substrates. The panel operates well at a practical brightness of 2000 cd/m 2 .
Articles you may be interested in 2 ∕ 3 in. ultrahigh-sensitivity image sensor with active-matrix high-efficiency electron emission device
A 640×480pixel image sensor has been developed for low light imaging with a practical resolution. This image sensor combined an active-matrix high-efficiency electron emission device (HEED) with a high-gain avalanche rushing amorphous photoconductor (HARP) target. To meet the requirement for a scaling of the imaging size, we developed a 2∕3in. image sensor based on an active-matrix HEED with 13.75×13.75μm2pixels. The highly emissive property of 3.8μA∕pixel was comparable to that obtained previously from a 1in. device. The possible effect of the pixel size scaling on the image-pickup sensitivity was compensated by a significant increase in the emission current density. The technological potential of the HEED-HARP image sensing has been further enhanced toward practical use.
Articles you may be interested inActive-matrix Spindt-type field emitter array with faster response time for image sensor with high-gain avalanche rushing amorphous photoconductor target J. Vac. Sci. Technol. B 33, 012205 (2015); 10.1116/1.4906103 2 ∕ 3 in. ultrahigh-sensitivity image sensor with active-matrix high-efficiency electron emission device J. Vac. Sci. Technol. B 28, C2D11 (2010); 10.1116/1.3271163 640 × 480 pixel active-matrix Spindt-type field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target J. Vac. Sci. Technol. B 28, 96 (2010); 10.1116/1.3272732Enhanced output current density of an active-matrix high-efficiency electron emission device array with 13.75 μ m pixels An extremely high-sensitivity image sensor has been developed with a combination of an active-matrix high-efficiency electron emission device ͑HEED͒ array and a high-gain avalanche rushing amorphous photoconductor ͑HARP͒ target. Following the description of the requirements for the use of the electron emitter as an image-sensing probe, the characteristics of a fabricated 640ϫ 480 pixel active-matrix HEED image sensor with a HARP target are presented by image-pickup experiments under a dark condition. The emission current density of the experimental HEED under an active-matrix drive was 4 A / cm 2 corresponding to a practical level. A clear image observed in the prototype compact camera demonstrates that the surface-emitting HEED is useful for image sensing based on HARP with high sensitivity and sufficient definition.
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