Development of a low stress RF MEMS double-cantilever shunt capacitive switch

Ansari, Hamid Reza; Kordrostami, Zoheir

doi:10.1007/s00542-020-04838-1

Cited by 8 publications

(2 citation statements)

References 24 publications

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“…Nowadays, the theory of RF MEMS switches has obtained rapid development. Many designs have achieved better isolation at large bandwidth but at a cost of a high pull-down voltage of 10-40V [5][6][7][8][9][10][11][12][13][14][15][16]. The electrostatic drive switches are hard to integrate into CMOS chip systems reason of high actuation voltages.…”

Section: Introductionmentioning

confidence: 99%

Analysis and design of a novel RF MEMS switch with low pull-down voltage, high return loss, and high isolation at 10- 60GHz

Zhou

Deng

et al. 2023

Preprint

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This paper presents a novel radio frequency micro-electro-mechanical systems (RF MEMS) switch fabricated on a high resistivity silicon substrate. Slots, like square interleaved slots and split-ring slots, are used in the transmission-line to get better RF performance. Comparing three switch structures with different slot cells, the switch with square interleaved slots is suitable at Ka-band (26 ~ 40GHz), but the switch with split-ring slots can be applied to RF circuits at 10-60GHz. The switch with split-ring slots is optimal for the switching mechanism in diverse 5G RF circuitry. When it works at 30GHz, it shows a low insertion loss better than − 0.256dB, a low re-turn loss better than − 22dB, and the isolation is observed below − 39dB. Its “pull-down” voltage is 6.5V. Due to its outstanding performance, the proposed RF MEMS switch is suitable for various applications.

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Section: Introductionmentioning

confidence: 99%

Analysis and design of a novel RF MEMS switch with low pull-down voltage, high return loss, and high isolation at 10- 60GHz

Zhou

Deng

et al. 2023

Preprint

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“…The highest stress and the lowest stress have been applied to the spring and the membrane, respectively. Therefore, for reducing the stress in the switch a special notice should be given to the spring design it can be maintained that only the stress of few points of the spring gets to 25 MPa [21]. This paper is arranged as follows, In Section 2, the structure of the proposed switch with different membranes, and its description are discussed.…”

mentioning

confidence: 99%

Electromechanical modelling and stress analysis of RF MEMS capacitive shunt switch

et al. 2022

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This paper presents the simulation and theoretically calculation results of a shunt switch with Electro-mechanical modelling and stress gradient characteristics. The analysis is done with three membrane structures such as plane beam, incorporated with and without perforations, and non-uniform meander type beam, these are simulated in the COMSOL Multiphysics tool. The various Modal analyses are carried out for different values of residual stress gradients such as different structures, materials, and beam thickness. These analyzes are described by the fact that higher stress gradient values are undesirable for switching. By analysing all the results we have observed that the stress analysis for a shows that non-uniform meandered switch experiences maximum stress of 35.6 MPa, and center deflection of 0.06 MPa/μm, the deformations of the beam which is the least among the considered switches.

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Design and analysis of a novel low RF MEMS switch with low pull-in voltage and high capacitance ratio

et al. 2023

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Development of a low stress RF MEMS double-cantilever shunt capacitive switch

Cited by 8 publications

References 24 publications

Analysis and design of a novel RF MEMS switch with low pull-down voltage, high return loss, and high isolation at 10- 60GHz

Analysis and design of a novel RF MEMS switch with low pull-down voltage, high return loss, and high isolation at 10- 60GHz

Electromechanical modelling and stress analysis of RF MEMS capacitive shunt switch

Design and analysis of a novel low RF MEMS switch with low pull-in voltage and high capacitance ratio

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