Development of a high-pressure CdS sputtering process for improved efficiency in CIGS-based photovoltaic devices

Flower like Buffer Layer to Improve Efficiency of Submicron-Thick CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> Solar Cells

“…Figure 5(b) shows When fitting these curves with a two-diode model [18], the shunt resistances are about 494 Ω and 5,980 Ω for the normal device and the nanostructured device, respectively. Shunt resistance is related to the leakage current; high shunt resistance indicates low leakage current, which results in high opencircuit voltage [19]- [20]. In our SCs with the flower like nanostructured CdS film, open-circuit voltage was increased in addition to short-circuit current density.…”

“…This indicates that more oxygen participates in the synthesis of the flower like nanostructured CdS film than in the synthesis of normal CdS film. Oxygen is able to passivate the defects at CIGS grain boundaries more effectively than sulphur [20]. Therefore, this oxygen effect can result in high shunt resistance and increase open-circuit voltage.…”

The role of oxygen doping on elemental intermixing at the PVD‐CdS/Cu (InGa)Se2 heterojunction

“…Absorbed light loss in the CdS window layer is a known limiting factor for further improving the quantum efficiency in the blue light region. An oxygenated CdS thin film deposited via reactive sputtering was proven to be effective in increasing the bandgap of the window layer and thus benefiting the performance of CdS/CdTe solar cells and CdS/CIGS solar cells . So far, little comprehensive investigation at the atomic scale has been presented of the effects of the concentration of oxygen on the structure of the oxygenated thin films and the resulting CdS/CIGS solar cell devices.…”