Flower like Buffer Layer to Improve Efficiency of Submicron-Thick CuIn&amp;amp;lt;sub&amp;amp;gt;1-x&amp;amp;lt;/sub&amp;amp;gt;Ga&amp;amp;lt;sub&amp;amp;gt;x&amp;amp;lt;/sub&amp;amp;gt;Se&amp;amp;lt;sub&amp;amp;gt;2&amp;amp;lt;/sub&amp;amp;gt; Solar Cells

Semi-transparent photovoltaic devices for building integrated applications have the potential to provide simultaneous power generation and natural light penetration. CuIn1−xGaxSe2 has been established as a mature technology for thin-film photovoltaics; however, its potential for Semi-Transparent Photovoltaics (STPV) is yet to be explored. In this paper, we present its carrier transport physics explaining the trend seen in recently published experiments. STPV requires deposition of films of only a few hundred nanometers to make them transparent and manifests several unique properties compared to a conventional thin-film solar cell. Our analysis shows that the short-circuit current, Jsc, is dominated by carriers generated in the depletion region, making it nearly independent of bulk and back-surface recombination. The bulk recombination, which limits the open-circuit voltage Voc, appears to be higher than usual and attributable to numerous grain boundaries. When the absorber layer is reduced below 500 nm, grain size reduces, resulting in more grain boundaries and higher resistance. This produces an inverse relationship between series resistance and absorber thickness. We also present a thickness-dependent model of shunt resistance showing its impact in these ultra-thin devices. For various scenarios of bulk and interface recombinations, shunt and series resistances, AVT, and composition of CuIn1−xGaxSe2, we project the efficiency limit, which—for most practical cases—is found to be ≤10% for AVT≥25%.

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Carrier transport and performance limit of semi-transparent photovoltaics: CuIn1−xGaxSe2 as a case study

Maria

Saha

Khan

et al. 2021

Journal of Applied Physics

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Interface Analysis of Cu(In,Ga)Se2 and ZnS Formed Using Sulfur Thermal Cracker

Cho¹,

Lee²,

Wi³

et al. 2016

ETRI J

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We analyzed the interface characteristics of Zn‐based thin‐film buffer layers formed by a sulfur thermal cracker on a Cu(In,Ga)Se2 (CIGS) light‐absorber layer. The analyzed Zn‐based thin‐film buffer layers are processed by a proposed method comprising two processes — Zn‐sputtering and cracker‐sulfurization. The processed buffer layers are then suitable to be used in the fabrication of highly efficient CIGS solar cells. Among the various Zn‐based film thicknesses, an 8 nm–thick Zn‐based film shows the highest power conversion efficiency for a solar cell. The band alignment of the buffer/CIGS was investigated by measuring the band‐gap energies and valence band levels across the depth direction. The conduction band difference between the near surface and interface in the buffer layer enables an efficient electron transport across the junction. We found the origin of the energy band structure by observing the chemical states. The fabricated buffer/CIGS layers have a structurally and chemically distinct interface with little elemental inter‐diffusion.

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Flower like Buffer Layer to Improve Efficiency of Submicron-Thick CuIn&lt;sub&gt;1-x&lt;/sub&gt;Ga&lt;sub&gt;x&lt;/sub&gt;Se&lt;sub&gt;2&lt;/sub&gt; Solar Cells

Cited by 2 publications

References 19 publications

Carrier transport and performance limit of semi-transparent photovoltaics: CuIn1−xGaxSe2 as a case study

Carrier transport and performance limit of semi-transparent photovoltaics: CuIn1−xGaxSe2 as a case study

Interface Analysis of Cu(In,Ga)Se2 and ZnS Formed Using Sulfur Thermal Cracker

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