Development of a 60 $\mu{\rm m}$ Deep Trench and Refill Process for Manufacturing Si-Based High-Voltage Super-Junction Structures

Bartolf, Holger; Mihaila, A.; Nistor, I.; Jurisch, Michael; Leibold, B.; Zimmermann, Martín

doi:10.1109/tsm.2013.2272042

Cited by 24 publications

(18 citation statements)

References 24 publications

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“…To demonstrate the capability of our instrument, we performed dopant imaging on Si-based high-voltage super-junction device structures [7]. These structures were manufactured by a demanding and complex trench-etching followed by epitaxial refill process.…”

Section: Resultsmentioning

confidence: 99%

Dopant imaging of power semiconductor device cross sections

Gysin

Meyer

Glatzel

et al. 2016

Microelectronic Engineering

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Several Scanning Probe Microscopy (SPM) methods allow to image dopant profiles in a range from 10 14 cm-3 to 10 19 cm-3 on semiconducting samples. In our work we present Scanning Capacitance Force Microscopy (SCFM) and Kelvin Probe Force Microscopy (KPFM) experiments performed on cross sections of silicon (Si) and silicon carbide (SiC) power devices and epitaxially grown calibration layers. The KPFM signals show under illumination a reduced influence on surface defect states. In addition results from numerical simulation of these microscope methods are discussed.

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Section: Resultsmentioning

confidence: 99%

Dopant imaging of power semiconductor device cross sections

Gysin

Meyer

Glatzel

et al. 2016

Microelectronic Engineering

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“…However, the highest aspect ratio achieved for a deep trench with a suitable window is only 46 [16]. Besides, the aspect ratio implemented in a 600 V SJ-MOSFET is only 25 [17]. Therefore, in this study, the HK-pillar aspect ratio is set as 27.5 for a feasible deep trench.…”

Section: Device Structure and Fabrication Methodsmentioning

confidence: 99%

Study on the IGBT Using a Deep Trench Filled With SiO₂ and High-k Dielectric Film

Chen

Cheng

2020

IEEE J. Electron Devices Soc.

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A novel insulated gate bipolar transistor (IGBT) using a deep trench filled with SiO2 and high-k dielectric film (HKF) is presented. The deep trench with the HKF can provide rapid depletion of the drift region during the turn-off transient, eliminating the tail current and reducing the turn-off loss. According to the simulation results, with a relative permittivity of 475 and a 400 nm thickness for the HKF, the proposed device obtains a 62% reduction in the turn-off loss compared to a conventional field stop IGBT at the same on-state voltage and breakdown voltage. Moreover, compared to an IGBT using a trench filled with HK dielectric, the proposed device is more feasible to be fabricated and has a lower gate-to-anode capacitance, which can reduce the current and voltage oscillations during the turn-off transient.

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“…In silicon technology, state-of-the-art charge-compensated super-junction devices, improved the trade-off between these two entities [1] beyond the so-called unipolar silicon limit [2] at the cost of highly demanding manufacturing processes. For power applications the higher cost is either incurred from a sequence of epitaxial layer deposition and implantation steps completed by dopant diffusion [3,4,5] to form continuous pillars or from trench etching and epitaxial-refilling processes [6], where recently trenches as deep as 60 μm have been demonstrated [7]. Nevertheless, the performance of these devices remains limited by the intrinsic material properties of silicon.…”

Section: Motivationmentioning

confidence: 99%

Device Simulations on Novel High Channel Mobility 4H-SiC Trench MOSFETs and Their Fabrication Processes

Rossmann

Bubendorf

Zanella³

et al. 2015

Microelectronic Engineering

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Development of a 60 $\mu{\rm m}$ Deep Trench and Refill Process for Manufacturing Si-Based High-Voltage Super-Junction Structures

Cited by 24 publications

References 24 publications

Dopant imaging of power semiconductor device cross sections

Dopant imaging of power semiconductor device cross sections

Study on the IGBT Using a Deep Trench Filled With SiO₂ and High-k Dielectric Film

Device Simulations on Novel High Channel Mobility 4H-SiC Trench MOSFETs and Their Fabrication Processes

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Development of a 60 $\mu{\rm m}$ Deep Trench and Refill Process for Manufacturing Si-Based High-Voltage Super-Junction Structures

Cited by 24 publications

References 24 publications

Dopant imaging of power semiconductor device cross sections

Dopant imaging of power semiconductor device cross sections

Study on the IGBT Using a Deep Trench Filled With SiO2 and High-k Dielectric Film

Device Simulations on Novel High Channel Mobility 4H-SiC Trench MOSFETs and Their Fabrication Processes

Contact Info

Product

Resources

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Study on the IGBT Using a Deep Trench Filled With SiO₂ and High-k Dielectric Film