Development of a 16.8% Efficient 18-μm Silicon Solar Cell on Steel

Wang, Lu; Lochtefeld, A.; Han, Jialuo; Gerger, Andrew; Carroll, M.; Ji, Jingjia; Lennon, Alison; Li, Hongzhao; Opila, R. L.; Barnett, Allen

doi:10.1109/jphotov.2014.2344769

Cited by 53 publications

(44 citation statements)

References 38 publications

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“…Both surfaces of this thin silicon are well passivated and optically designed. However, according to our analysis the theoretical maximum Voc of this thin silicon solar cell can be as high as 767 mV [5]. The Voc difference between an ideal case and a practical case is due to the introduced recombination.…”

Section: Introductionmentioning

confidence: 75%

“…The detailed fabrication of this UTSi solar cell has been described [5,6]. All semiconductor layers including n + front surface field, n base and p + emitter are epitaxially grown on a porous silicon layer on a p + wafer.…”

Section: Fabricationmentioning

confidence: 99%

“…In a previous paper, an 18 μm thin crystalline silicon solar cell on steel has achieved a best efficiency of 16.8% and a best open circuit voltage (Voc) of 642.3 mV [5]. The structure of the ultrathin silicon (UTSi) solar cell is shown in Figure 1.…”

Section: Introductionmentioning

confidence: 99%

“…This paper discusses these recombination sources that include non-ideal passivated front and rear surfaces, laser-introduced damage on the front surface, contacted regions on both front and rear surfaces and edge recombination. Based on our previous analysis, bulk recombination is negligible for such thin crystalline silicon solar cells [5]; thus, it is not discussed in this paper.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of Losses in Open Circuit Voltage for an 18-μm Silicon Solar Cell

et al. 2015

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An 18 μm thin crystalline silicon solar cell was demonstrated, and its best open circuit voltage is 642.3 mV. However, this value is far from the cell's theoretical upper limit in an ideal case. This paper explores the open circuit voltage losses of the thin silicon solar cell, starting from the ideal case, through first principle calculation and experiments. The open circuit voltage losses come from the introduced recombination due to the non-ideal surface passivation and contacts integration on front and rear surfaces, and edge isolation. This paper presents a roadmap of the open circuit voltage reduction from an ideal case of 767.0 mV to the best measured value of 642.3 mV.

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Section: Introductionmentioning

confidence: 75%

Section: Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Analysis of Losses in Open Circuit Voltage for an 18-μm Silicon Solar Cell

et al. 2015

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“…Actually, as predicted in [23], the 4n 2 limit was surpassed in several narrow spectral ranges. Such optical performance, united to recent successful efforts in passivating nano-and micro-textured c-Si [25,48] and in growing high-quality ultra-thin c-Si slabs [49], paves the way for the realization of high efficiency ultra-thin c-Si solar cells. …”

Section: Discussionmentioning

confidence: 99%

Decoupled front/back dielectric textures for flat ultra-thin c-Si solar cells

Isabella¹,

Vismara²,

Ingenito³

et al. 2016

Opt. Express

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Abstract:The optical analysis of optically-textured and electrically-flat ultra-thin crystalline silicon (c-Si) slabs is presented. These slabs were endowed with decoupled front titanium-dioxide (TiO 2 ) / back silicondioxide (SiO 2 ) dielectric textures and were studied as function of two types of back reflectors: standard silver (Ag) and dielectric modulated distributed Bragg reflector (MDBR). The optical performance of such systems was compared to that of state-of-the-art flat c-Si slabs endowed with so-called front Mie resonators and to those of similar optical systems still endowed with the same back reflectors and decoupled front/back texturing but based on textured c-Si and dielectric coatings (front TiO 2 and back SiO 2 ). Our optimized front dielectric textured design on 2-µm thick flat c-Si slab with MDBR resulted in more photo-generated current density in c-Si with respect to the same optical system but featuring state-of-the-art Mie resonators ( + 6.4%), mainly due to an improved light in-coupling between 400 and 700 nm and light scattering between 700 and 1050 nm. On the other hand, the adoption of textured dielectric layers resulted in less photogenerated current density in c-Si up to −20.6% with respect to textured c-Si, depending on the type of back reflector taken into account.

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Quasi‐Omnidirectional Ultrathin Silicon Solar Cells Realized by Industrially Compatible Processes

Zhong

Zhuang

et al. 2019

Adv Elect Materials

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Ultrathin crystalline silicon (c‐Si) solar cells provide advantages in reducing the use of c‐Si material and being flexible, but there are several challenges that need to be conquered, such as limited optical absorption, high sensitivity to surface recombination, and complicated fabrication issues. Here, all‐solution‐processed Si nanopyramids (SiNPs) are proposed as the surface texture for ultrathin c‐Si solar cells to solve the light absorption issue, whose preparation process is simple, low‐cost, and industrially compatible. Combining the SiNPs texture with good passivation technique, an efficiency of 15.1% with an open circuit voltage approaching 700 mV is realized on a 37 µm thick c‐Si solar cell. Moreover, both experimental and simulation investigation reveal that the SiNP‐textured ultrathin solar cells have quasi‐omnidirectional light absorption characteristic, showing a potential to produce higher all‐day output power compared with the Si micropyramids textured counterpart. To further reduce the cost of ultrathin c‐Si solar cells, a direct copper metallization is also investigated in replacement of silver metallization, which can result in a comparable efficiency. The present work demonstrates the conventional industrial processes for achieving low‐cost ultrathin c‐Si solar cells.

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Development of a 16.8% Efficient 18-μm Silicon Solar Cell on Steel

Cited by 53 publications

References 38 publications

Analysis of Losses in Open Circuit Voltage for an 18-μm Silicon Solar Cell

Analysis of Losses in Open Circuit Voltage for an 18-μm Silicon Solar Cell

Decoupled front/back dielectric textures for flat ultra-thin c-Si solar cells

Quasi‐Omnidirectional Ultrathin Silicon Solar Cells Realized by Industrially Compatible Processes

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