Decoupled front/back dielectric textures for flat ultra-thin c-Si solar cells

Isabella, Olindo; Vismara, Robin; Ingenito, Andrea; Rezaei, Nasim; Zeman, Miro

doi:10.1364/oe.24.00a708

Cited by 14 publications

(5 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We further consider two grating height cases of 100 and 150 nm. The material and geometry combination of the grating structure are of physical relevance for electrically decoupled light trapping structure schemes to enhance light trapping and incoupling in solar cells 37 .…”

Section: Benchmarkingmentioning

confidence: 99%

Perturbing beyond the shallow amplitude regime: Green’s function scattering formalism with Bloch modes

et al. 2019

View full text Add to dashboard Cite

We present a Bloch modes' based Green's function scattering formalism for cost efficient forward modelling of disordered binary surface textures. The usage of Bloch modes of an unperturbed reference ordered system as ansatz allows our formalism to address surface scattering beyond the shallow amplitude regime. The main advantage of our formalism is the possibility to utilize a small amount of plane waves to represent the assumed Bloch modes thereby reducing computational costs, while still allowing one to estimate the scattering response to all channels accessible by the disordered system. Benchmarking calculations discussed in the paper demonstrate how the usage of our Bloch modes ansatz provides an excellent estimate of the scattering response over an important regime of disorder. As an example of our method's strength, we examine an electrically decoupled binary light trapping texture and demonstrate how introducing disorder may improve light incoupling into the considered solar cell structure. arXiv:1809.00195v1 [physics.optics] 1 Sep 2018

show abstract

Section: Benchmarkingmentioning

confidence: 99%

Perturbing beyond the shallow amplitude regime: Green’s function scattering formalism with Bloch modes

et al. 2019

View full text Add to dashboard Cite

show abstract

“…[10] In order to reduce the manufacturing cost of silicon-based solar cells, thin-film solar cells with high efficiency and low cost have become a research hotspot. [12][13][14][15][16] The improvement of the light absorption of thinfilm solar cells can be achieved by increasing the optical path DOI: 10.1002/adts.202100586 length of the photon and reducing the reflectivity of the upper surface light in the cell. [17,18] The first method is using the surface plasmon of metal particles.…”

Section: Introductionmentioning

confidence: 99%

Thin‐Film Solar Cells by Silicon‐Based Nano‐Pyramid Arrays

Huang

Wang

2022

Advcd Theory and Sims

View full text Add to dashboard Cite

In this paper, a high‐efficiency silicon‐based thin‐film solar cell is proposed based on double‐layer nano‐pyramid (DNP) arrays. In the model, the surface and bottom of the silicon photovoltaic layer are embedded with silicon nano‐pyramid array and aluminum nano‐pyramid array, respectively. The optical and electrical parameters of the DNP solar cell are presented by using the 3D finite‐difference time‐domain (FDTD) method. The short‐circuit current density (Jsc), integrated absorption (α) and photoelectric conversion efficiency (η) of the optimized DNP solar cell are 43.61 mA cm−2, 95.20% and 27.12%, respectively. Compared with the planar solar cell, the α and η of the DNP solar cell are increased by 45.31% and 15.77%, respectively. To investigate the performance of the proposed solar cell, the principle of light absorption enhancement is analyzed by spectrum and field strength distributions for the DNP structure. Furthermore, the carrier recombination and manufacturing of the DNP solar cell, and compared the structures of different arrays is studied. Further results show that the DNP structure has excellent light absorption and tolerance, which has positive significance for the development of silicon‐based thin‐film solar cells.

show abstract

“…In this paper, we propose an experimentally feasible indium‐rich In 0.6 Ga 0.4 N/GaN p‐i‐n thin film–based solar cell with a dual nanograting (NG) structure: an Ag nanograting on the backside of the solar cell and a GaN nanograting on frontside of the solar cell (see Figure ). Some researchers have recently proposed the use of dual nanogratings in silicon (crystalline, microcrystalline, and amorphous) and organic solar cells etc . In most of these solar cells, the nanogratings are in direct contact with the active region of the solar cells.…”

Section: Introductionmentioning

confidence: 99%

Indium‐rich InGaN/GaN solar cells with improved performance due to plasmonic and dielectric nanogratings

Kumawat

Kumar

Bhardwaj

et al. 2019

Energy Science & Engineering

View full text Add to dashboard Cite

In this study, we propose an indium‐rich InGaN/GaN p‐i‐n thin‐film solar cell which incorporates a dual nanograting (NG) structure: Ag nanogratings (Ag‐NGs) on the backside of the solar cell and gallium nitride nanogratings (GaN‐NGs) on the frontside. Finite‐difference time‐domain (FDTD) simulation results show that the dual NG structure couples the incident sunlight to the plasmonic and photonic modes, thereby increasing the absorption of the solar cell in a broad spectral range. It is observed that the solar cells having the dual nanograting structures have a significant enhancement in light absorption as compared to cells having either no nanogratings or having only the frontside nanogratings or only the backside nanogratings. Analysis of light absorption in solar cells containing the dual NG structures showed that the absorption enhancement of longer wavelengths is mostly due to the Ag‐NGs on the backside and of shorter wavelengths is mostly due to the GaN‐NGs on frontside of the solar cell. The Jsc and power conversion efficiency (PCE) are calculated under AM1.5G solar illumination and are observed to be significantly enhanced due to the presence of optimized dual NG structures. While there is an increase in Jsc from 17.88 to 23.19 mA/cm2 (~30% enhancement), there is an increase in PCE from 15.49% to 20.24% (~31% enhancement) under unpolarized light (average of TM and TE). Moreover, the study of oblique light incidence shows significantly larger Jsc of the dual nanograting solar cells compared to the cells with no nanogratings.

show abstract

Decoupled front/back dielectric textures for flat ultra-thin c-Si solar cells

Cited by 14 publications

References 39 publications

Perturbing beyond the shallow amplitude regime: Green’s function scattering formalism with Bloch modes

Perturbing beyond the shallow amplitude regime: Green’s function scattering formalism with Bloch modes

Thin‐Film Solar Cells by Silicon‐Based Nano‐Pyramid Arrays

Indium‐rich InGaN/GaN solar cells with improved performance due to plasmonic and dielectric nanogratings

Contact Info

Product

Resources

About