Development of 4H-SiC Schottky np diode with high blocking voltage and ultralow on-resistance

Abstract

A Schottky np diode (SNPD) was fabricated on a 4H-SiC C-face epitaxial wafer, and its I-V characteristics were investigated. The diode showed a high blocking voltage of 300 V and ultralow on-resistance of 0.18 m Ω cm2 at a forward bias of 2.4 V. This value is almost the same as the resistance of the 4H-SiC bulk substrate, indicating that the resistance of the drift layer is almost zero and does not contribute to the observed on-resistance. As the temperature was increased, the forward I-V curve moved in parallel as the built-in bias shifted to a lower voltage due to the reduction in the barrier height of the np junction. This means that the resistance of SNPD above built-in bias is the same regardless of temperature. These results suggest that the diode is different from the conventional Schottky diodes and pn diodes. This diode has great potential for devices with both ultralow on-resistance and high blocking voltage.

Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage

“…[20][21][22] Based on the fully depletion of the sandwiched p-type layer, the electrons can diffuse and drift to the Schottky junction under positive bias without recombining with holes in the depleted p region. [20,23] Under reverse bias, the peak electric field located at the pn junction interface rather than the interface of metal and semiconductor could lead to an enhanced leakage blocking capability. However, corresponding design has rarely been investigated in the GaN, which could be a result of the immature technology of Schottky contact on the p-GaN layer, as well as the lack of a comprehensive model for the GaN SPND structure.…”

A Printed Wireless Triangle‐Wave Generator via a Smartphone

“…The printed diode has a laminating aluminum foil as a top electrode to achieve a turn‐on voltage of 0.6 V, while maintaining low reverse leakage currents. [ 13 ] The printed IGZO diode with a laminated aluminum foil electrode could wirelessly obtain DC 10 V from the NFC carrier of the smartphone with 50% efficiency. [ 14 ] However, the laminated aluminum foil‐based electrodes were not suited to print inexpensive and practical rectenna for the printed wireless CV tag, using a scalable high‐throughput printing method.…”

Analysis of Dislocation Contrast in Synchrotron Grazing-incidence X-ray Topographs and Ray-tracing Simulation in Off-axis 4H-SiC Crystals

“…In recent years, the demand for power devices fabricated from silicon carbide (SiC) has been increasing rapidly due to its superior physical properties. However, there are still problems arising from limitations on the device active area and long-term reliability [1][2][3]. For further development of SiC devices, it is critical to reduce the density of various defects in the physical vapor transport (PVT)-grown SiC substrates and CVDgrown epilayers, such as threading screw/mixed dislocations (TSDs/TMDs), threading edge dislocations (TEDs), dislocations lying on the basal plane including Frank dislocations and basal plane dislocations (BPDs).…”