Development of 400 V-Tolerant Single-Event Effect Hardened 4H-SiC Schottky Diode With Linear Energy Transfer Upto 83.5 MeV⋅cm<sup>2</sup>/mg

Yuan, Hao; Liu, Keyu; Liu, Yancong; Tang, Xiaoyan; Zhou, Yu; Du, Fengyu; Han, Chao; Zhang, Yibo; Lian, Pengfei; Zhang, Yimen; Zhang, Yuming; Song, Qingwen

doi:10.1109/led.2023.3286609

IEEE Electron Device Lett.

2023

DOI: 10.1109/led.2023.3286609

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Development of 400 V-Tolerant Single-Event Effect Hardened 4H-SiC Schottky Diode With Linear Energy Transfer Upto 83.5 MeV⋅cm²/mg

Hao Yuan

Keyu Liu

Yancong Liu

et al.

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2024

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Cited by 2 publications

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Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V

Yan,

Zhai,

Yang

et al. 2024

Applied Physics Letters

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Single-event burnout and single-event leakage current (SELC) in silicon carbide (SiC) power devices induced by heavy ions severely limit their space application, and the underlying mechanism is still unclear. One fundamental problem is lack of high-resolution characterization of radiation damage in the irradiated SiC power devices, which is a crucial indicator of the related mechanism. In this Letter, high-resolution transmission electron microscopy (TEM) was used to characterize the radiation damage in the 1437.6 MeV 181Ta-irradiated SiC junction barrier Schottky diode under 200 V. The amorphous radiation damage with about 52 nm in diameter and 121 nm in length at the Schottky metal (Ti)–semiconductor (SiC) interface was observed. More importantly, in the damage site the atomic mixing of Ti, Si, and C was identified by electron energy loss spectroscopy and high-angle annular dark-field scanning TEM. It indicates that the melting of the Ti–SiC interface induced by localized Joule's heating is responsible for the amorphization and the possible formation of titanium silicide, titanium carbide, or ternary phases. The mushroom-like hillock in the Ti layer can be attributed to Rayleigh–Taylor instability, as another evidence for ever-happened localized melting near the Schottky interface. These modifications at nanoscale in turn cause localized degradation of the Schottky contact, resulting in permanent increase in leakage current. This experimental study provides very valuable clues for a thorough understanding of the SELC mechanism in SiC diodes.

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Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V

Yan,

Zhai,

Yang

et al. 2024

Applied Physics Letters

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Influence of Transport Mechanism and Defect Behavior on Leakage Current in 4H-SiC JBS Diodes After Neutron Irradiation

Bai,

Guo,

Liu

et al. 2024

IEEE Trans. Electron Devices

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Development of 400 V-Tolerant Single-Event Effect Hardened 4H-SiC Schottky Diode With Linear Energy Transfer Upto 83.5 MeV⋅cm²/mg

Cited by 2 publications

References 26 publications

Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V

Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V

Influence of Transport Mechanism and Defect Behavior on Leakage Current in 4H-SiC JBS Diodes After Neutron Irradiation

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Development of 400 V-Tolerant Single-Event Effect Hardened 4H-SiC Schottky Diode With Linear Energy Transfer Upto 83.5 MeV⋅cm2/mg

Cited by 2 publications

References 26 publications

Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V

Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V

Influence of Transport Mechanism and Defect Behavior on Leakage Current in 4H-SiC JBS Diodes After Neutron Irradiation

Contact Info

Product

Resources

About

Development of 400 V-Tolerant Single-Event Effect Hardened 4H-SiC Schottky Diode With Linear Energy Transfer Upto 83.5 MeV⋅cm²/mg