Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V
Xiaoyu Yan,
Pengfei Zhai,
Chen Yang
et al.
Abstract:Single-event burnout and single-event leakage current (SELC) in silicon carbide (SiC) power devices induced by heavy ions severely limit their space application, and the underlying mechanism is still unclear. One fundamental problem is lack of high-resolution characterization of radiation damage in the irradiated SiC power devices, which is a crucial indicator of the related mechanism. In this Letter, high-resolution transmission electron microscopy (TEM) was used to characterize the radiation damage in the 14… Show more
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